[1P01-52] Poster Presentation

[1P41] Growth of vanadium dioxide thin film on fused silica glass by controlling discharge voltage in reactive sputtering

*Haruki Sato¹, Yuka Kurosaki², Kosuke Kasugai², Md. Suruz Mian¹, Takeo Nakano¹ (1. Graduate School of Science and Technology, Seikei University, 2. Department of Materials and Life Sciences, Faculty of Science and Technology, Seikei University)

It has been known that the growth of the VO₂ crystal phase showing insulator-metal transition is difficult on an amorphous glass substrate. In this study, VO₂ thin film was deposited on fused silica glass substrates using a reactive direct current magnetron sputtering (r-DCMS) system. VO₂ was deposited by a transient voltage change operation: the discharge voltage was initially set at 390 V and waited for 20 seconds. Then, the O₂ flow rate was reduced to change the voltage to 360 V, 350 V, 340 V, or 320 V and waited for another 20 seconds. These operations were repeated during the deposition period of 10 min. By XRD, the diffraction peak from VO₂ (M) (011) plane at 2θ = 27.99° was observed in the 390/350 V sample, indicating the crystal growth of VO₂ thin films on a fused silica glass substrate. This sample showed the resistance change with one order of magnitude at around 68 ℃. These results suggested the growth of the VO₂ (M1) phase by the transient voltage change operation.