[2Cp01-10] Celebration of the New Inter-society Alliances in Asia and Pacific Rim

[2Cp02] The early growth stages of Ga and Al on SiO2-SiC-Si followed in-situ by high-surface sensitivity photoemission spectroscopy.

*Ana Cristina Silva¹ (1. NOVA School of Science and Technology, NOVA University Lisbon)

High-resolution high surface/interface sensitivity photoemission spectroscopy studies of the early growth stages of Ga and Al on (SiO2)/3C-SiC (111)- 90 nm thick, and of heterostructures formed at the interface is discussed. Submonolayer deposition rates of Ga and Al were used to follow the early growth stages and the mechanism of intermediate heterostructures at the interfaces. The results revealed the formation of layers of Al-oxide and Ga-oxide and intermediate oxides, as initial steps of the process. The reaction of Al and Ga ultrathin films with nitrogen was further investigated for different substrate temperatures and times of reaction. A remote microwave plasma source was used for the nitrogen reaction. The experiments were carried out in an UHV chamber and all steps monitored in-situ by high-resolution and high surface sensitivity photoemission spectroscopy.