[2Cp01-10] Celebration of the New Inter-society Alliances in Asia and Pacific Rim

[2Cp10] Topography-driven plasma-enhanced atomic layer etching of SiO₂ using sequential surface fluorination and argon bombardment

*Airah Peraro Osonio¹, Takayoshi Tsutsumi¹, Ranjit Borude², Nobuyoshi Kobayashi¹, Masaru Hori¹ (1. Graduate School of Engineering, Nagoya University, 2. ASM Japan K.K.)

Silicon dioxide (SiO₂) is crucial in the semiconductor industry for insulation, passivation, and gate dielectric uses. Plasma-enhanced atomic layer etching offers precise material removal; here, we explored new co-reactants, including radical reactions, for SiO₂ etching. Fluorine radicals were used for surface fluorination and low energy ion bombardment via argon plasma for etching, achieving controlled monolayer removal (0.14 nm per cycle) with potential bias-enhanced angular control.