[2P01-53] Poster Presentation

[2P12] Characterizing Metal-Insulator Transition dynamics in VO₂ thin film by using s-SNOM

*Kyungmin Kim¹, Linfeng Hou¹, Jun Nishida², Takashi Kumagai², Masayuki Abe¹ (1. Graduate School of Engineering Science, Osaka University, 2. Center for Mesoscopic Sciences, Institute for Molecular Science)

Vanadium dioxide (VO₂) thin films exhibit a metal–insulator transition (MIT) with sensitivity to the lattice strain [1, 2]. Substrates with step and terrace structures could be an attractive platform for growing high-quality thin films using the atomically-ordered surface structures. Thus, a prominent lattice strain effect could be derived using VO₂ thin films on these substrates. In this study, we grew VO₂ thin films on TiO₂(110) substrates with step and terrace structures to investigate their crystallinity and MIT dynamics in real space, by using X-Ray Diffraction (XRD) and scattering-type Scanning Near-field Optical Microscopy (s-SNOM).