2022 International Conference on Solid State Devices and Materials

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Oral Presentation

08: Low Dimensional Devices and Materials

[H-4] Device Application I: Low Dimensional Devices and Materials

Wed. Sep 28, 2022 9:00 AM - 10:00 AM 302 (3F)

Session Chair: Takamasa Kawanago (Tokyo Tech), Takayuki Arie (Osaka Metropolitan Univ.)

9:15 AM - 9:30 AM

[H-4-02] In-plane Gate Graphene Transistor with Epitaxially Grown Molybdenum Disulfide Passivation Layers

〇Po-Cheng Tsai1, Chun-Wei Huang2, Che-Jia Chang2, Shu-Wei Chang2, Shih-Yen Lin2 (1. Univ. of Taiwan (Taiwan), 2. Res. of Applied Sciences (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-4-02

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