[H-4] Device Application I: Low Dimensional Devices and Materials

[H-4-03] Work function modulation of Au/Bi bilayer system toward p-type WSe₂ FET

〇Ryuichi Nakajima¹, Tomonori Nishimura¹, Keiji Ueno², Kosuke Nagashio¹ (1. The Univ. of Tokyo (Japan), 2. Saitama Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.H-4-03

Au/ultrathin Bi bilayer contact was studied to acquire
high performance p-type FET by suppressing defect-related
Fermi level pinning. Low melting point and low density
of states of Bismuth provide the damage-free contact
and the modulation of effective work function by forming
the bilayer contact. The modulation of effective work
function was certainly observed by C-V measurement as
a function of Bi thickness and p-type WSe2 Schottky FET
was clearly demonstrated with Au/2-nm Bi electrodes.