[S-5] MOS Device

Y. Tarui, T. Sugano, S. Kawaji, N. Kawamura (1.Electrotechnical Laboratory, 2.University of Tokyo, 3.Gakushuin University, 4.Nippon Electric Co., Ltd.)

1971 Conference on Solid State Devices |PDF Download

[5-1] Differential Negative Resistance (DNR) in n-Channel MOSFET's of Si

Y. Murayama, Y. Katayama, N. Kotera, Y. Kamigaki, I. Yoshida, K. F. Komatsubara (1.Hitachi Ltd.)

1971 Conference on Solid State Devices |PDF Download

[5-2] Anisotropic Channel Conductivity of MOSFETs on the (110) Surface of Silicon

H. Sakaki, T. Sugano (1.University of Tokyo)

1971 Conference on Solid State Devices |PDF Download

[5-3] Technology and Performance of N-channel MOS-LSI Using Depletion-Type Load Elements

N. Hashimoto, M. Nagata, T. Masuhara (1.Hitachi Ltd.)

1971 Conference on Solid State Devices |PDF Download

[5-4] The Proposal of Electrically Reprogramable Non-Volatile Semiconductor Memory

Y. Tarui, Y. Hayashi, K. Nagai (1.Electrotechnical Laboratory)

1971 Conference on Solid State Devices |PDF Download

[5-5] Avalanche-Injection MOS Read-Only-Memory

H. Hara, K. Ohuchi, T. Sato, H. Tango, Y. Yasuda, Y. Ohmori, M. Yamanaka, Y. Takeishi (1.Tokyo Shibaura Electric Co., Ltd.)

1971 Conference on Solid State Devices |PDF Download

[5-6] Electron Mobility in an MOS Inversion Layer

Y. C. Cheng (1.Bell-Northern Research)

1971 Conference on Solid State Devices |PDF Download

[S-6] Other Devices

Y. Hamakawa, T. Tokuyama, M. Umeno, K. Takahashi (1.Osaka University, 2.Hitachi Ltd., 3.Nagoya University, 4.Tokyo Institute of Technology)

1971 Conference on Solid State Devices |PDF Download

[6-1] A New Magnetocapacitance Effect in Metal-Ferromagnetic Semiconductor Junctions

M. Toda (1.RCA Research Laboratories, Inc.)

1971 Conference on Solid State Devices |PDF Download

[6-2] A New Type of Stress Sensitive Device

Y. Miyai, N. Tsuda, H. Kawamura (1.Matsushita Electronics Corporation, 2.Osaka University)

1971 Conference on Solid State Devices |PDF Download