[C-3-7LN] ArF Excimer Laser Induced Chemical Vapor Deposition of a-Si from Si2H6

A. Yoshikawa, S. Yamaga, K. Matsumoto, M. Takeuchi (1.Department of Electronic Engineering, Chiba University)

1983 Conference on Solid State Devices and Materials |PDF Download

[C-3-8LN] WIDE OPTICAL GAP BINARY Si:H ALLOYS PREPARED BY GLOW DISCHARGE OF DISILANE

Shoji FURUKAWA, Nobuo MATSUMOTO (1.Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

1983 Conference on Solid State Devices and Materials |PDF Download

[C-4-1LN] Crystal Growth of GaAs using trimethylgallium (TMG) as a Ga source in the MBE system

Eisuke Tokumitsu, Yoshimitsu Kudo, Makoto Konagai, Kiyoshi Takahashi (1.Department of Physical Electronics, Tokyo Institute of Technology)

1983 Conference on Solid State Devices and Materials |PDF Download

[C-4-2LN] Growth Characterization of MOCVD AlGaAs Alloy System

M. Mizuta, F. Moriyama, S. Kawata, T. Iwamoto, H. Kukimoto (1.Imaging Science and Engineering Laboratory, Tokyo Institute of Technology)

1983 Conference on Solid State Devices and Materials |PDF Download

[C-4-3LN] Induced Dislocations and Change of the EL2 Trap Density in Undoped Bulk GaAs by Si3N4 or SiO2 Cap Annealing

F. Hasegawa, N. Yamamoto, T. Sumi, Y. Nannichi (1.Institute of Material Science, University of Tsukuba)

1983 Conference on Solid State Devices and Materials |PDF Download

[C-4-4LN] Deep Levels in MOCVD InP / S.I. InP Structure Used for InP MESFET

Mototsugu OGURA, Masashi MIZUTA, Nobuyasu HASE, Hiroshi KUKIMOTO (1.Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 2.Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.)

1983 Conference on Solid State Devices and Materials |PDF Download

[C-4-5LN] METAL/Al2O3/InP MISFET RING OSCILLATOR

S. Itagaki, T. Sawada, H. Ohno, H. Hasegawa (1.Department of Electrical Engineering, Faculty of Engineering, Hokkaido University)

1983 Conference on Solid State Devices and Materials |PDF Download

[C-4-6LN] GaAs-AlxGa1-xAs Multiquantum Well Visible Lasers Grown by Molecular Beam Epitaxy

M. Mashita, R. M. Kolbas, C. Nozaki, Y. Ashizawa, H. Furuyama, Y. Uematsu (1.Toshiba R & D Center, Toshiba Corp., 2.Corporate Technology Center, Honeywell Inc.)

1983 Conference on Solid State Devices and Materials |PDF Download

[C-4-7LN] PHOTOLUMINESCENCE FROM ZERO-DIMENSIONAL ELECTRON SYSTEMS IN A GaAs QUANTUM WELL--A QUANTUM WELL IN STRONG MAGNETIC FIELDS

Y. ARAKAWA, H. SAKAKI, H. OKAMOTO, M. NISHIOKA, J. YOSHINO, Y. SEKIGUCHI, N. MIURA (1.Institute of Industrial Science, Institute for Solid State Physics, University of Tokyo, 2.Musashino Electrical Communication Laboratory, N.T.T)

1983 Conference on Solid State Devices and Materials |PDF Download

[C-4-8LN] Fabrication of GaAlAs Multi-Quantum-Well Buried Heterostructure Lasers Using Diffusion-Induced Disordering

T. Fukuzawa, S. Semura, T. Ohta, Y. Uchida, T. Narusawa, K. L. I. Kobayashi, H. Nakashima (1.Optoelectronics Joint Research Laboratory)

1983 Conference on Solid State Devices and Materials |PDF Download