[D-9-1] Hot Electron Transistors Using InGaAs/InAlGaAs Heterostructure

K. Imamura, S. Muto, T. Fujii, H. Ohnishi, N. Yokoyama, S. Hiyamizu, A. Shibatomi (1.Fujitsu Limited.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-9-2] Extremely High Peak-to-Valley Current Ratio Obtained in an InAlAs/InGaAs Resonant Tunneling Barrier Structure Grown by MBE

Tsuguo Inata, Shunichi Muto, Toshio Fujii, Satoshi Hiyamizu (1.Fujitsu Laboratories Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-9-3] Heterojunction Bipolar Transistors Fabricated by Emitter and Base Self-Alignment Techniques

M. Inada, K. Eda, Y. Ota, A. Nakagawa, T. Hirose, Y. Yanagihara (1.Wireless Research Lab., Matsushita Electric Ind. Co. Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-9-4] High Transconductance Inverted HEMT for LSI

T. Saito, S. Nishi, H. Inomata, T. Itoh, Y. Sano, K. Kaminishi (1.Research Laboratory, Oki Electric Industry Co., Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-9-5] A p-Channel Double Heterojunction GaAs/AlGaAs Modulation Doped Field Effect Transistor

Kanji Yoh, J. S. Harris Jr. (1.Solid State Electronics Lab, Stanford University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-9-6] AlInAs/GaInAs HIFETs(Hetero-Interface FETs) grown by Normal pressure MOCVD Using Triethylmetals

M. Kamada, H. Ishikawa, M. Ikeda, Y. Mori, C. Kojima (1.Sony Corporation Research Center)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-9-7] AlxGa1-xAs Hetero-MIS Gate Depletion-Mode InP FET's

T. Itoh, K. Kasahara, T. Ozawa, K. Ohata (1.Microelectronics Research Laboratories, NEC Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-11-5] Efficiency Improvement in Amorphous SiGe:H Solar Cells by the Use of a Graded Bandgap Layer at the i/n Interface

S. Yamanaka, S. Yoshida, M. Konagai, K. Takahashi (1.Department of Physical Electronics, Tokyo Institute of Technology)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-11-6] Near Infrared Photoconductivity in a-Si:H(F)/a-SiGe:H(F) Multilayers

Shunri Oda, Hajime Shirai, Akihito Tanabe, Jun-ichi Hanna, Tetsuro Nakamura, Isamu Shimizu (1.The Graduate School at Nagatsuta, Research Laboratory of Engineering Materials, Tokyo Institute of Technology)

1986 International Conference on Solid State Devices and Materials |PDF Download