[B-8-3] Thermal Behavior of MCZ-NTD Silicon

M. Wakatsuki, Y. Matsushita, M. Tajima (1.Semiconductor Materials Engeneering Dept. TOSHIBA Coporation, 2.Electrotechnical Laboratory)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-8-4] Improvement of Silicon Surface Quality by H2 Anneal

Y. Matsushita, M. Wakatsuki, Y. Saito (1.Semiconductor Materials Engineering Dept. TOSHIBA Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-9-1] Lattice Configuration and Electrical Properties at the Interface of Direct Bonded Silicon

K. Furukawa, M. Shimbo, K. Fukuda, K. Tanzawa (1.Toshiba Research & Development Center, Toshiba Corp.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] MeV-Energy B+, P+ and As+ Ion Implantation into Si

M. Tamura, N. Natsuaki, Y. Wada, E. Mitani (1.Central Research Laboratory, Hitachi Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-9-3] The Effects of Ions on the Formation of Polysilicon Films

A. Kawamura, J. Kudo, K. Iguchi, Y. Kubota, H. Sato, M. Koba, K. Awane (1.Central Research Laboratories, SHARP Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-10-1] Normally-Off MOS FETs Using Ultra Thin SOI Structured Si Film

Fumitoshi HATORI, Takuo SUGANO (1.Depertment of Electronic Engineering, University of Tokyo)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-10-2] Advanced High Mobility Polysilicon Super-thin Film Transistor (SFT) Using Solid Phase Growth

H. HAYASHI, T. NOGUCHI, T. OHSHIMA, M. NEGISHI, Y. HAYASHI (1.Research & development Dept. Semiconductor Group, SONY)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-10-3] Selective Doping of P Atoms in Lateral Solid Phase Epitaxy of Si Films

Hiroshi ISHIWARA, Makoto TANAKA, Seijiro FURUKAWA (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-10-4] Electron and Ion Beam-Stimulated Solid Phase Regrowth of Phosphorus-Implanted Silicon

M. Miyao, A. Polman, R. van Kemp, W. Sinke, J. E. M. Westendorp, J. F. van der Veen, F. W. Saris (1.Central Research Laboratory, Hitachi Ltd., 2.FOM-Institute for Atomic and Molecular Physics, 3.Phys. Lab. University of Amsterdam)

1986 International Conference on Solid State Devices and Materials |PDF Download

[B-10-5] Electrical and Physical Properties of Rapid-Zone-Recrystallized SOI Made Using a Pulsed Arc Lamp

Charles E. Hunt, Jeffrey Frey (1.Cornell University School of Electrical Engineering)

1986 International Conference on Solid State Devices and Materials |PDF Download