[S-I-9] Quantum Interference Effect in Selectively Doped GaAs-AlGaAs Submicron Ring

Koji ISHIBASHI, Yukihiko TAKAGAKI, Shyuichi ISHIDA, Kenji GAMO, Yoshinobu AOYAGI, Mitsuo KAWABE, Kazuo MURASE, Susumu NAMBA (1.Department of Electrical Engineering, Faculty of Engineering Science, 2.Department of Physics, Faculty of Science, Osaka University, 3.Institute of Physical and Chemical Research, 4.Institute of Material Science, University of Tsukuba)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-10] Switching Characteristics of Photoluminescence in AlGaAs SCH-QW Structure by Electric Field

Ichiro OGURA, Masamichi YAMANISHI, Yasuo KAN, Ikuo SUEMUNE (1.Department of Physical Electronics, Hiroshima University)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-11] Carrier Induced Change in Refractive Index of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Its Application

Hisao YOSHIMURA, Toshio MATSUSUE, Hiroyuki SAKAKI (1.Institute of Industrial Science, University of Tokyo)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-12] Semiconductor Device Simulations for High-Speed Devices

Masaaki Tomizawa, Kiyoyuki Yokoyama, Akira Yoshii (1.NTT Electrical Communications Laboratories)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-13] Analytical Modeling of Small Semiconductor Devices Using the Relaxation Time Approximation

J. Sone, T. Kimura, T. Yamada (1.Microelectronics Research Laboratories, NEC Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-14] Significance of Low Field Mobility and Its Carrier Concentration Dependence in Characteristics of High Electron Mobility Transistors

Jun-ichi Motohisa, Kazuhiko Hirakawa, Hiroyuki Sakaki (1.Institute of Industrial Science, University of Tokyo)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-15] Principal GaAs FET Parameter Which Most Influences the Transconductance gmmax

Fumio HASEGAWA (1.Institute of Materials Science, University of Tsukuba)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-16] Ensemble Monte Carlo Simulation of AlGaAs/GaAs Heterostructure MIS-Like FET

Kazutaka Tomizawa, Nobuo Hashizume (1.Meiji University, 2.Electrotechnical Laboratory)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-17] Potential of Low Temperature Heterojunction Bipolar IC

Kuniichi Ohta, Akio Furukawa (1.Fundamental Research Laboratories, NEC Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-18] A Particle Simulation for Transport Phenomena in Heavily Doped Base HBTs

Riichi KATOH, Jiro YOSHIDA, Mamoru KURATA (1.Toshiba Research and Development Center)

1987 Conference on Solid State Devices and Materials |PDF Download