[A-9-4] Si Atomic-Layer-Epitaxy Using Thermally-Cracked-Si2H6

Yoshiyuki Suda, Yasuhiro Misato, Daiju Shiratori (1.Faculty of Technology, Tokyo University of Agriculture and Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-9-5] Intrinsic Stress and Misfit Relaxation Ge/Si(001)

G. Wedler, J. Walz, T. Hesjedal, E. Chilla, R. Koch (1.Institut fur Experimentalphysik, Freie Universitat Berlin, 2.Paul-Drude-Institut fur Festkorperelektronik, 3.Dep. Electr. Electron. Eng., Tokyo Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-9-6] Atomic-Layer Doping in Si1-xGex/Si/Si1-xGex Heterostructures by Two-Step Solid-Phase Epitaxy

Nobuyuki Sugii, Kiyokazu Nakagawa, Shinya Yamaguchi, Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-10-1] Spherical Silicon Crystal and Use for Integrated Circuits

Akira Ishikawa (1.Ball Semiconductor Inc.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-10-2] COP-Free Silicon Surfaces by Rapid Thermal Annealing (RTA) in a H2/Ar Mixture Ambient Using High Growth Rate Crystals

Norihiro Kobayashi, Shoji Akiyama, Masahiro Kato, Takao Abe (1.Isobe R&D Center, Shin-Etsu Handotai)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-10-3] Influence of Microscopic Chemical Reaction on the Preparation of Oxide Free Silicon Surface in Fluorine-Based Solution

Yoshihiro Sugita, Satoru Watanabe (1.Fujitsu Laboratories Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-10-4] Wafer-Scale Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface

H. Sakaue, T. Tanaka, S. Fujiwara, S. Shingubara, T. Takahagi (1.Dept. of Electrical Eng., Hiroshima Univ.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-10-5] Highly Efficient Gettering of Heavy Metals Using Carbon Implanted Eptaxial Si Wafers

Toshihiko Itoga, Kazuyuki Houzawa, Kazuo Takeda, Seiichi Isomae, Makoto Ohkura (1.Central Research Laboratory, Hitachi, Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-9-1] Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs

Cheon-Hong Kim, Jae-Hong Jeon, Juhn-Suk Yoo, Kee-Chan Park, Min-Koo Han (1.School of Electrical Engineering, Seoul National University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] Performance and Reliability Improvement of Polycrystalline Silicon Thin Film Transistors by Deuterium Plasma Passivation

Darren. C. Chen, C. Y. Lu, Steve S. Chung, C. F. Yeh (1.Department of Electronic Engineering, National Chiao Tung University)

1998 International Conference on Solid State Devices and Materials |PDF Download

249 results (211 - 220)

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