[C-1-6] GaAs Nanocrystals Fabricated by Ga and As Ion Implantation

Y. Kanemitsu, S. Mimura, S. Okamoto, K. S. Min, H. A. Atwater (1.Graduate School of Materials Science, Nara Institute of Science and Technology, 2.Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-1-7] Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots

S. A. Ding, M. Ikeda, M. Fukuda, S. Miyazaki, M. Hirose (1.Department of Electrical Engineering, Hiroshima University, 2.CREST, Japan Science and Technology Corporation (JST))

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-2-1] Single-Electron Tunneling in Nanocrystalline Silicon

Shunri Oda, Amit Dutta, S-P. Lee, Y. Hayafune, S. Hara, K. Nishiguchi, B. J. Hinds, S. Hatatani (1.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-2-2] Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures

Michihiko Suhara, Lars-Erik Wernersson, Boel Gustafson, Niclas Carlsson, Werner Seifert, Lars Samuelson, Kazuhito Furuya (1.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2.Department of Solid State Physics, Lund University, 3.Department of Electrical and Electronic Engineering, Tokyo Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-2-3] STM Nano-Lithography with SiO2 Mask

Nan Li, Tatsuo Yoshinobu, Hiroshi Iwasaki (1.The Institute of Scientific and Industrial Research, Osaka University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Fabrication of High-Resolution and High-Aspect-Ratio Pattering on a Stepped Substrate by Scanning Probe Lithography Using a Multilayer-Resist System

Masayoshi Ishibashi, Nami Sugita, Seiji Heike, Hiroshi Kajiyama, Tomihiro Hashizume (1.Advanced Research Laboratory, Hitachi, Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[C-2-5] Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Depositon

Taketomo Sato, Chinami Kaneshiro, Hiroshi Okada, Hideki Hasegawa (1.Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Information Engineering, Hokkaido University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] RF Device Trends for Wireless Applications

Masahiro Muraguchi (1.NTT Wireless Systems Laboratories)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] Strain Engineering of Silicon-Based Heterostructures: Materials and Devices

J. L. Hoyt, K. Rim, T. O. Mitchell, D. V. Singh, J. F. Gibbons (1.Solid State Electronics Laboratory, Stanford University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] RF Noise Study of Small Gate Width Si-MOSFETs up to 8GHz Application for Low Power Consumption

E. Morifuji, C. E. Biber, W. Bachtold, T. Ohguro, T. Yoshitomi, H. Kimijima, T. Morimoto, H. S. Momose, Y. Katsumata, H. Iwai (1.Toshiba Corporation, 2.Swiss Federal Institute of Technology (ETH))

1998 International Conference on Solid State Devices and Materials |PDF Download