[C-10-5] Highly Improved Electrical Properties of Diamond MISFET Prepared by Ultrahigh-Vacuum Process

Young Yun、Tetsuro Maki、Hiroyuki Tanaka、Takeshi Kobayashi (1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-1] First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces

Hiroyuki Kageshima、Kenji Shiraishi (1.NTT Basic Research Laboratories)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-2] Incorporation of N into Si/SiO2 Interfaces: Molecular Orbital Calculations for Evaluating Interface Strain and Heat of Reaction

Jiro Ushio、Takuya Maruizumi、Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-3] Dependence of Hopping-Conduction Energy of Holes on Distance between Trap Sites in SiO2: a Molecular Orbital Calculation

Yoshiaki Takemura、Jiro Ushio、Takuya Maruizumi、Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-4] Peroxy Linkage Defects in SiO2 Examined through First-Principles Calculations: Defect Formation, Boron Binding, and Charged States of the B Adduct

Takuya Maruizumi、Jiro Ushio、Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-10-1] Tight-Binding Molecular Dynamics Simulation of Desorbed SiO Molecule during the Oxidation of Si(111) Surface

Aruba Yamada、Akira Endou、Hiromitsu Takaba、Kazuo Teraishi、S. Salai Cheettu Ammal、Momoji Kubo、Akira Miyamoto、Kazutaka G. Nakamura、Masahiro Kitajima (1.Department of Materials Chemistry, Graduate School of Engineering, Tohoku University、2.National Research Institute for Metals)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-10-2] Structural Analysis of SiGeC Alloys by ab initio Total-Energy Calculations

Akira YAMADA、Nagako MIYAZONO、Makoto KONAGAI (1.Department of Electrical and Electronic Engineering, Tokyo Institute of Technology)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-10-3] Quantum Chemical Study on the Interaction of NF3 with Si

Akira Endou、Aruba Yamada、Momoji Kubo、Kazuo Teraishi、S. Salai Cheettu Ammal、Akira Miyamoto、Masahiro Kitajima、Thomas W. Little、Fumio S. Ohuchi (1.Department of Materials Chemistry, Graduate School of Engineering, Tohoku University、2.National Research Institute for Metals、3.Department of Materials Science and Engineering, University of Washington)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-10-4] First-Principles Investigation of Imperfect Structures in SiO2: Origins of Charge Traps Inducing Leakage Currents

Ayumi Yokozawa、Yoshiyuki Miyamoto (1.NEC ULSI Device Development Laboratories、2.NEC Fundamental Research Laboratories)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード