[D-8-1] Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs

Koji Onomitsu、Takehito Okabe、Toshiki Makimoto、Hisao Saito、Yoshiji Horikoshi (1.School of Science and Engineering, Waseda University、2.NTT Basic Research Laboratories)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-2] Strain Relaxation Mechanism in the Growth of InAs on GaAs(110) Surfaces Studied by Scanning Tunneling Microscopy

Hiroshi Yamaguchi、Norihisa Oyama (1.NTT Basic Research Laboratories、2.Department of Applied Physics and Phisico-Infomatics, Keio University)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-3] Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE

Sangyoru Lee、Masashi Akabori、Takahiro Shirahata、Junichi Motohisa、Takashi Fukui (1.Research Center for Interface Quantum Electronics, Hokkaido University、2.Air Water Inc., Sakai Research Center Industrial Technology Development)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-4] Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy

Shinji Koh、Takashi Kondo、Yasuhiro Shiraki、Ryoichi Ito (1.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo、2.Department of Materials Science, The University of Tokyo、3.Department of Physics, Meiji University)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-5] Resonance-Induced Modification of Spatially Direct and Indirect Stark Ladder Transitions in a GaAs/AlAs Superlattice p-i-n Diode

T. Nogami、T. Takeda、K. Fujiwara (1.Kyushu Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-1] Device Technology for InP/InGaAs HBT Lightwave Communication ICs

S. Yamahata、M. Ida、N. Watanabe、K. Kurishima、H. Nakajima、E. Sano (1.NTT Photonics Laboratories、2.NTT Network Innovation Laboratories)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-2] High Linearity and High Power Device Fabricated by Al0.3Ga0.7As/In0.15Ga0.85As Double Doped-Channel Heterostructure

Feng-Tso Chien、Yi-Jen Chan (1.R&D DEPT., Chino-Excel Technology Corp.、2.Department of Electrical Engineering, National Central University)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-3] High-Linearity and Current-Enhancement Camel-Gate Field Effect Transistor Utilizing δ-Doping Channels

Jung-Hui Tsai (1.Department of Electronic Engineering, Chien Kuo Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-4] A Thermal Resistance Measurement of HBT with Pulsed Current I-V Setup and Its Scalability with the Total Emitter Area

Hyun-Min Park、Sang-Hoon Cheon、Songcheol Hong (1.Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST))

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-5] DLTS, PL and CL Study of Dominant Deep Level and Its Removal in InGaP/GaAs Heterostructure Grown by TBP-Based GSMBE

Fumitaro Ishikawa、Atsushi Hirama、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード