The Japan Society of Applied Physics

2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

Sep 14, 2004 - Sep 17, 2004
Tower Hall Funabori, Tokyo, Japan

473 results (381 - 390)

[P5-13] Contactless Characterization of Fixed Charge in HfO2 Thin Film by Photoreflectance

Masayuki Sohgawa, Masato Yoshida, Takuji Naoyama, Taizou Tada, Koji Ikeda, Takeshi Kanashima, Akira Fujimoto, Masanori Okuyama (1.Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 2.Department of Electrical Engineering, Wakayama National College of Technology)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P5-15] Influence of Thermal Annealing on Chemical Structure of Lanthanum oxide/Si Interfacial Transition Layer

H. Nohira, T. Yoshida, H. Okamoto, S. Shinagawa, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Ng Jin Aun, Y. Kobayashi, S. Ohmi, H. Iwai, Y. Takata, K. Kobayashi, T. Hattori (1.Department of Electrical & Electronic Engineering, Musashi Institute of Technology, 2.Department of Engineering Physics and Mechanics, Kyoto University, 3.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4.Frontier Collaborative Research Center, Tokyo Institute of Technology, 5.RIKEN/SPring-8, 6.JASRI/SPring-8)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P6-1] Nitride-based light emitting diode and photodetector dual function Devices with InGaN/GaN multiple quantum well structures

Y. D. Jhou, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chang, P. C. Chen, H. Hung, S. M. Wang, C. L. Yu (1.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University, 2.Department of Electrical Engineering Cheng Shiu University, 3.Department of Electronic Engineering, Nan Jeon Institute of Technology)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P6-4] Characteristics of Pt/Schottky Diode s fabricated on the Cracked GaN Epitaxial Layer on (111) Silicon

Sung-Jong Park, Yong-Woon Choi, Heon-Bok Lee, Wang Lian Shan, Soo-Jin Chua, Jung-Hee Lee, Sung-Ho Hahm (1.School of Electrical and Computer Engineering, Kyungpook National University, 2.Institute of Materials Research and Engineering, Singapore, 3.Department of Electrical and Computer Engineering, National University of Singapore, Singapore.)

2004 International Conference on Solid State Devices and Materials |PDF Download

473 results (381 - 390)