[B-8-2] Effects of high pressure hydrogen and deuterium annealing on nMOSFET with Hf-base gate dielectrics

Hokyung Park, Byounghun Lee, Mark Gardner, Hyunsang Hwang (1.Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 2.International SEMATECH, 3.IBM Assignee, 4.AMD assignee)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-8-3] Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO2 Stacked Layer

Chang Seo Park, Byung Jin Cho, Lei Jun Tang, Wiede Wang, Dim-Lee Kwong (1.Silicon Nano Device Lab, Dept. of Electrical & Computer Engineering, National University of Singapore, 2.Institute of Microelectronics, 3.Institute of Materials Research Engineering, 4.Department of ECE, The University of Texas)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-8-4] Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films

Masato Koyama, Yuuichi Kamimuta, Masahiro Koike, Tsunehiro Ino, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-8-5] High Quality Hf-Silicate Gate Dielectrics Fabrication by Atomic Layer Deposition (ALD) Technology

Satoshi Kamiyama, Takayoshi Miura, Tomonori Aoyama, Hiroshi Kitajima, Tsunetoshi Arikado (1.Research Dept.1, Semiconductor Leading Edge Technologies (Selete), Inc.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-9-1] A Novel Cell Structure with Bit Line Cap Spacer (BCS) and Top Enlarged Storage Node Contact (TESC) for 90 nm DRAM Technology and Beyond

C.J. Yun, Y.K. Park, J.W. Lee, D.I. Bae, S.B. Kim, S.H. Shin, J.G. Lee, S.H. Lee, D.J. Lee, E.C. Lee, B.H. Roh, I.H. Nam, T.Y. Chung (1.DRAM Process Architecture Team, Samsung Electronics Co., Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] Improvement of Contact Resistance of Ru electrode/TiN barrier at Ru/Crystalline-Ta2O5/Ru Capacitor for 50nm DRAM device

HanJin Lim, SukJin Chung, Kwanghee Lee, Jinil Lee, Jin Yong Kim, ChaYoung Yoo, SungTae Kim, Uin Chung, JooTae Moon (1.Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co.,Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-9-3] A 500ｰC fabrication process for MIM capacitors-based on a Ta2O5/Nb2O5 bilayer with high permittivity-for DRAM and SoC applications

Yuichi Matsui, Masahiko Hiratani, Isamu Asano (1.Central Research Laboratory, Hitachi, Ltd., 2.Elpida Memory, Inc.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-9-4] A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications

Shinsuke Sakashita, Takeshi Hayashi, Tomonori Okudaira, Kazutoshi Wakao, Junichi Tsuchimoto, Kenichi Mori, Kiyoteru Kobayashi, Masahiro Yoneda (1.Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-10-1] Scaling of Multiple-Gate Fully Depleted SOI Transistors

Olivier Faynot, Gabriel Barna, Romain Ritzenthaler, Pierre Gidon (1.CEA-LETI, CEA Grenoble, 2.Texas Instruments)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-10-2] Device Design Consideration for Four-terminal Double-gate MOSFET (4T-DGFET)

M. Masahara, Y.-X. Liu, K. Sakamoto, K. Endo, T. Sekigawa, T. Matsukawa, E. Suzuki (1.Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

2004 International Conference on Solid State Devices and Materials |PDF Download

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