[A-1-1] Gate Stress Induced Performance Enhancements

Zoran Krivokapic, Qi Xiang, Witek Maszara, Ming-ren Lin (1.AMD, Technology Research Group)

2004 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] Physical Origin of Drive Current Enhancement in Ultra-thin Ge-On-Insulator (GOI) MOSFETs under Full Ballistic Transport

Shin-ichi Takagi (1.Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Suppression of Boron Penetration from S/D Extension to improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65nm node CMOS and beyond

T. Hayashi, T. Yamashita, K. Shiga, K. Hayashi, H. Oda, T. Eimori, M. Inuishi, Y. Ohji (1.Renesas Technology Corp., Wafer Process Engineering Development Dept.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] Dopant Profile Design Methodology for 65 nm Generation via Inverse Modeling

Takuji Tanaka, Mitsuru Yamaji, Hiroyuki Kanata, Yukio Tagawa, Shigeo Satoh, Toshihiro Sugii (1.FUJITSU Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] Strained-Si for CMOS 65nm node : Si0.8Ge0.2 SRB or “Low Cost” approach ?

F. Boeuf, F. Payet, N. Casanova, Y. Campidelli, N. Villani, O. Kermarrec, J.M. Hartmann, N. Emonet, F. Leverd, P. Morin, C. Perrot, V. Carron, C. Laviron, F. Arnaud, S. Jullian, D. Bensahel, T. Skotnicki (1.STMicroelectronics, 2.CEA-LETI, 3.Philips Semiconductors)

2004 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application

Kenzo Manabe, Kensuke Takahashi, Taeko Ikarashi, Ayuka Morioka, Heiji Watanabe, Takuya Yoshihara, Toru Tatsumi (1.System Devices Research Laboratories, NEC Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+poly-Si/HfAlOx/SiO2 n-MOSFETs

N. Yasuda, H. Hisamatsu, H. Ota, A. Toriumi (1.MIRAI-ASET, 2.MIRAI-ASRC, 3.Department of Materials Science, The University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics

Kensuke Takahashi, Kenzo Manabe, Ayuka Morioka, Taeko Ikarashi, Takuya Yoshihara, Heiji Watanabe, Toru Tatsumi (1.System Devices Research. Laboratories, NEC Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric

Rino Choi, Byoung Hun Lee, Chadwin D. Young, Jang Hoan Sim, Gennadi Bersuker (1.International SEMATECH, 2.IBM assignee)

2004 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Charge Trapping Characteristics of Hafnium Based High-κDielectrics with Various Metal Electrodes

Chadwin D. Young, Gennadi Bersuker, Huang-Chun Wen, George A. Brown, Prashant Majhi (1.International SEMATECH (ISMT), 2.Phillips Assignee)

2004 International Conference on Solid State Devices and Materials |PDF Download