[P3-3] Electron Transport Model for Strained Silicon-Carbon Alloy

S. T. Chang, C. Y. Lin (1.Department of Electronic Engineering, Chung Yuan Christian University, 2.Department of Physics, National Chung Hsing University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-4] Control of UV Radiation Damages for the High Sensitive CCD Image Sensor

Yasushi Ishikawa, Yuji Katoh, Mitsuru Okigawa, Seiji Samukawa (1.Intelligent Nano-Process laboratory, Institute of Fluid Science, Tohoku University, 2.Sanyo Electric Co., Ltd., Component Group, Semiconductor Company, CCD Business Unit, Development Department)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-5] First-Principles Calculation Software for Dielectric Response Study of High-k Materials

Tomoyuki Hamada, Takenori Yamamoto, Hiroyoshi Momida, Tsuyoshi Uda, Takahisa Ohno (1.Institute of Industrial Science, University of Tokyo, 2.AdvanceSoft Corporation, 3.National Institute for Material Science)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-6] Workfunction Tuning Using Various Impurities for Fully Silicided NiSi Gate

Kousuke Sano, Masaki Hino, Norihiro Ooishi, Kentaro Shibahara (1.Research Center for Nanodevices and Systems, Hiroshima University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-7] Investigation of CVD-Co Silicidation for the Improvement of Contact Resistance

Hyun-Su Kim, Jong-Ho Yun, Kwang-Jin Moon, Woong-Hee Sohn, Seong-Hwee Cheong, Sug-Woo Jung, Gil-Heyun Choi, Se-Hoon Kim, Nam-Jin Bae, Sung-Tae Kim, U-In Chung, Joo-Tae Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 2.CVD Division, COMTECS Co., Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-8] Improving Characteristics of Tantalum Oxide Thin Film Devices with Copper Electrodes

Kou-Chiang Tsai, Wen-Fa Wu, Cheng-Ping Kuan, Chi-Chang Wu, Chuen-Guang Chao (1.Department of Materials Science and Engineering, National Chiao-Tung University, 2.National Nano Device Laboratories)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-9] Adsorption Behavior of Various Fluorocarbon Gases on the Silicon Wafer Surface

Atsushi Hidaka, Satoru Yamashita, Takeyoshi Kato, Yasuyuki Shirai, Tadahiro Ohmi (1.University of Tohoku, Department of Electronic Engineering, Graduate School of Engineering, 2.University of Tohoku, New Industry Creation Hatchery Center (NICHe))

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-10] Work function control of Al-Ni alloy for metal gate application

T. Matsukawa, C. Yasumuro, H. Yamauchi, S. Kanemaru, M. Masahara, K. Endo, E. Suzuki, J. Itoh (1.Nanoelectronics Research Institute, AIST)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-11] Poly-Si Comparable Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2

M. Kadoshima, K. Akiyama, N. Mise, S. Migita, N. Yasuda, K. Iwamoto, H. Fujiwara, K. Tominaga, M. Ohno, T. Nabatame, A. Toriumi (1.MIRAI-ASET, AIST Tsukuba West 7, 2.MIRAI-ASRC, AIST Tsukuba, Japan, 3.Department of Materials Science, The University of Tokyo, Japan)

2004 International Conference on Solid State Devices and Materials |PDF Download

[P3-12] Quantum Chemical Molecular Dynamics Simulation of Boron Diffusion and Si Implantation into Silicon Surface

Tsuyoshi Masuda, Hideyuki Tsuboi, Michihisa Koyama, Momoji Kubo, Akira Miyamoto (1.Department of Applied Chemistry, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University, 3.JST-PRESTO)

2004 International Conference on Solid State Devices and Materials |PDF Download

473 results (341 - 350)

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