[J-4-2] Graphene layers dependent vibrational property of metal-graphene heterostructures

S. Entani¹, S. Sakai¹, Y. Matsumoto¹, H. Naramoto¹, T. Hao¹, K. Takanashi^1,2, Y. Maeda^1,3 (1.JAEA, 2.Tohoku Univ., 3.Kyoto Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-4-3] Observation of bandgap in epitaxial bilayer graphene field effect transistors

S. Tanabe¹, Y. Sekine¹, H. Kageshima¹, M. Nagase¹, H. Hibino¹ (1.NTT Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-4-4] Bridging Growth and Electrical Properties of Single Carbon Nanowall

T. Kanda¹, H. Mikuni¹, K. Yamakawa², H. Kondo¹, M. Hiramatsu³, M. Sekine¹, M. Hori¹ (1.Nagoya Univ., 2.Katagiri Engineering Co., Ltd., 3.Meijo Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-5-1] Label-Free Immunosensors Based on Aptamer-Modified Graphene Field-Effect Transistors

Y. Ohno¹, K. Maehashi¹, K. Matsumoto¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-5-2] Performance Evaluation of Graphene Nanoribbon Heterojunction Tunneling Field Effect Transistors with various Source/Drain Doping Concentration and Heterojunction structure

H. Da¹, K. T. Lam¹, S. K. Chin², G. S. Samudra¹, Y. C. Yeo¹, G. Liang¹ (1.National Univ. of Singapore, 2.Institute of High Performance Computing , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-5-3] Impact of Surface Treatment of SiO₂/Si Substrate on Mechanically Exfoliated Graphene

T. Yamashita¹, J. Fujita¹, K. Nagashio¹, T. Nishimura¹, K. Kita¹, A. Toriumi¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-5-4] Graphene based transversal-gated field effect transistor due to band gap modulation

S. B. Kumar¹, T. Fujita¹, G. Liang¹ (1.National Univ. of Singapore , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-5-5L] Effect of Oxidation-induced Tensile Strain on Gate-all-Around Silicon Nanowire Based Single-electron Transistor Fabricated using Optical Lithography

Y. Sun^1,2, Rusli¹, N. Singh² (1.Nanyang Tech. Univ., 2.Inst. of Microelectronics , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-6-1] Circuit Implementation of InAs Nanowire FET

W. Prost¹, K. Blekker¹, O. Benner¹, F. J. Tegude¹ (1.University of Duisburg-Essen , Germany)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-6-2] Transport Physics of Quasi-Ballistic Nanowire MOSFETs

K. Natori¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (361 - 370)

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