[F-7-1] Current Status and Future Challenges of Resistive Switching Memories

W. C. Chien¹、F. M. Lee¹、Y. Y. Lin¹、Y. C. Chen¹、M. H. Lee¹、H. L. Lung¹、K. Y. Hsieh¹、C. Y. Lu¹ (1.Macronix International Co., Ltd. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-2] Investigation of Forming and Its Controllability in Novel HfO₂-Based 1T1R 40nm-Crossbar RRAM Cells

B. Govoreanu¹、S. Kubicek¹、G. Kar¹、Y. Y. Chen^1,2、V. Paraschiv¹、M. Rakowski^1,2、R. Degraeve¹、L. Goux¹、S. Clima¹、N. Jossart¹、C. Adelmann¹、O. Richard¹、T. Raes¹、D. Vangoidsenhoven¹、T. Vandeweye¹、H. Tielens¹、K. Kellens¹、K. Devriendt¹、N. Heylen¹、S. Brus¹、B. Verbrugge¹、L. Pantisano¹、H. Bender¹、G. Pourtois¹、J. A. Kittl¹、D. J. Wouters^1,2、L. Altimime¹、M. Jurczak¹ (1.imec、2.Katholieke Univ. Leuven , Belgium)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-3] CMOS Compatible Hf-based RRAM with Ultra-low Switching Currents/Power

F. Zhang¹、X. Li²、B. Gao¹、B. Chen¹、P. Huang¹、Y. Fu¹、Y. Chen¹、L. Liu¹、J. Kang¹、N. Singh²、G. Q. Lo²、D. L. Kwong² (1.Peking Univ. , China、2.A*STAR , Singapore)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-4L] Alloy and Strain Induced Multivalency in Magneli Phase Ti_nO_2n-3 and TiO₂-HfO₂ Alloys: Singlet Negative Ion States and Non-Linear Metallic Conduction

G. Lucovsky¹、J. W. Kim¹ (1.NC State Univ. , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-1] 50nm HfO₂ ReRAM with 50-Times Endurance Enhancement by Set/Reset Turnback Pulse & Verify Scheme

K. Higuchi¹、K. Miyaji¹、K. Johguchi¹、K. Takeuchi¹ (1.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-2] Hetero-device complementary resistive switches with high switch speed and reliability for cross point array applications

D. Lee¹、J. Park¹、S. Jung¹、G. Choi¹、J. M. Lee¹、M. Siddik¹、J. Shin¹、S. Kim¹、J. Woo¹、H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-3] Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory

C. W. Hsu¹、J. J. Huang¹、Y. M. Tseng¹、T. H. Hou¹、W. H. Chang²、W. Y. Jang²、C. H. Lin² (1.National Chiao Tung Univ.、2.Winbond Electronics Corp. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-4] Formation free low power resistive switching memory using IrO_x/AlO_x/W cross-point with excellent uniformity and multi level operation

W. Banerjee¹、S. Z. Rahaman¹、S. Maikap¹ (1.Chang Gung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-5] Highly Uniform and Reliable Switching Properties in NbO_x Based RRAM Devices

S. M. Sadaf¹、X. Liu¹、S. H. Choudhury¹、J. Shin¹、J. Woo¹、M. Siddik¹、H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-1] Record resistance ratio and bipolar/unipolar resistive switching scenario using novel Cu/GeO_x/W memory device

S. Z. Rahaman¹、S. Maikap¹、S. K. Ray^1,2、H. Y. Lee³、W. S. Chen³、F. T. Chen³、M. J. Kao³、M. J. Tsai³ (1.Chang Gung Univ. , Taiwan、2.Indian Inst. of Tech. , India、3.ITRI , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード