[J-6-3] Inherently fast spin relaxation of exciton in photo-excited self-assembled quantum dots

Y. H. Liao¹、J. I. Climente²、S. J. Cheng¹ (1.National Chiao-Tung Univ. , Taiwan、2.Universitat Jaume I, Castello , Spain)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-4] Wavelength tunable single-photon source with a side gate

T. Nakaoka^1,2,3、Y. Tamura¹、T. Miyazawa¹、K. Watanabe¹、Y. Ota¹、S. Iwamoto¹、Y. Arakawa¹ (1.Univ. of Tokyo、2.PRESTO-JST、3.Sophia Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-5] Donor-location-dependent RTS Observed by Trapping and Detrapping of a Photoexcited Electron by a Single Donor

A. Udhiarto¹、D. Moraru¹、T. Mizuno¹、M. Tabe¹ (1.Shizuoka Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-1] Rashba spin-orbit interaction due to wavefunction penetration in In_0.05Ga_0.95As/GaAs quantum dots

S. M. Huang¹、A. O. Badrutdinov^1,2、L. Serra^3,4、T. Kodera^5,6、T. Nakaoka^5,6,7、N. Kumagai^5,6、Y. Arakawa^5,6、D. A. Tayurskii²、K. Kono¹、K. Ono^1,7 (1.RIKEN , Japan、2.Kazan Federal Univ. , Russia、3.IFISC、4.Univ. de les Illes Balears , Spain、5.Univ. of Tokyo、6.Sophia Univ.、7.ICORP-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-2] Coulomb diamonds and Two-electron Spin Blockade in Cotunneling Regime of Serial Vertical Triple Quantum Dot Device

S. Amaha^1,2、W. Izumida³、T. Hatano^2,4、S. Teraoka^2,5、K. Ono^1,2、K. Kono¹、S. Taucha^2,5、J. Gupta⁶、D. G. Austing⁶ (1.RIKEN、2.ICORP-JST、3.Tohoku Univ.、4.ERATO-JST、5.Univ. of Tokyo , Japan、6.NRC-Canada , Canada)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-3] Electrostatic tuning of plasmonic cavities for edge magnetoplasmons

M. Hashisaka¹、N. Kumada²、H. Kamata^1,2、K. Washio¹、K. Muraki²、T. Fujisawa¹ (1.Tokyo Tech、2.NTT Basic Res. Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-4] Effect of Free Carriers on Dopant-induced Surface Potential in SOI-FETs

M. Anwar¹、R. Nowak^1,2、D. Moraru¹、R. Jablonski²、T. Mizuno¹、M. Tabe¹ (1.Shizuoka Univ. , Japan、2.Warsaw Univ. of Tech. , Pol)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-5] Nanoparticle Single-Electron Transistor with Metal Bridged Top-Gate Electrodes

Y. Azuma^1,2、S. Suzuki^1,2、K. Maeda^1,2、N. Okabayashi^1,2、D. Tanaka^2,3、T. Teranishi^2,3、M. R. Buitelaar⁴、C. G. Smith⁴、Y. Majima^1,2,5 (1.Tokyo Tech、2.CREST-JST、3.Univ. of Tsukuba , Japan、4.Univ. of Cambridge , UK、5.Sunchon National Univ. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-8-1] Atomic physics and quantum optics using circuits behaving as tunable artificial atoms

F. Nori^1,2 (1.RIKEN , Japan、2.Univ. of Michigan , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-8-2] Steady-state solution for dark states using a three-level system in coupled quantum dots

T. Tanamoto¹、K. Ono²、F. Nori^2,3 (1.Toshiba Corp.、2.RIKEN , Japan、3.Univ. of Michigan , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード