2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (271 - 280)

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[M-4-03] Mappings of Magnetic Field and Current Density Using Nano Superconducting Quantum Interference Device Microscope

Y. Shibata¹,^○S. Nomura¹, H. Kashiwaya², S. Kashiwaya², R. Ishiguro³, Y. Nago⁴, H. Takayanagi⁴ (1.Univ. of Tsukuba(Japan), 2.AIST(Japan), 3.Japan Women's Univ.(Japan), 4.Tokyo Univ. of Science(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:00 PM - 2:15 PM |PDF Download

[M-4-04(Late News)] First Principle Calculation of a Negatively Charged Boron-Vacancy Center in Diamond for Highly-Sensitive Magnetic Sensor Applications

^○A. Kunisaki¹, M. Muruganathan², H. Mizuta^2,3, T. Kodera¹ (1.Tokyo Tech(Japan), 2.JAIST(Japan), 3.Univ. of Southampton(UK))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:15 PM - 2:30 PM |PDF Download

[M-4-05(Late News)] Robust Gate-Injected-Operation of Gold Nanoparticle Nonvolatile Memory with Low-Damage CF₄-Plasma-Treated Blocking Oxide Layer

^○Y. H. Liu¹, J. C. Wang¹, T. C. Cheng², C. I. Wu² (1.Chang Gung Univ.(Taiwan), 2.National Taiwan Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 2:30 PM - 2:45 PM |PDF Download

[M-5-01(Invited)] Room temperature Bonding using Thin Metal Films: Technical Potential and Current Status

^○T. Shimatsu¹, M. Uomoto¹ (1.Tohoku Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 9:30 AM - 10:00 AM |PDF Download

[M-5-02] Quality and Reliability Investigation of Asymmetric Low Temperature Bonding Structure Using Ultra-thin Buffer Layer Technique

^○T. -Y. Yu¹, H. -W. Liang¹, Y. -J. Chang¹, K. -N. Chen¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 10:00 AM - 10:20 AM |PDF Download

[M-5-03] Reduction Reaction Analysis of Nanoparticle Copper Oxide by Formic Acid

^○M. Fujino¹, M. Akaike¹, N. Matsuoka¹, T. Suga¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 10:20 AM - 10:40 AM |PDF Download

[M-5-04] Dynamics of Ultrasonic Cu Ball Bonding Measured in-situ by Using Piezoresistive Linear Array Sensors

^○K. Iwanabe¹, K. Nakadozono¹, T. Asano¹ (1.Kyushu Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 10:40 AM - 11:00 AM |PDF Download

[N-1-01(Invited)] Compositionally Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors with 500-GHz f_T and BV_CEO > 5V

^○N. Kashio¹, T. Hoshi¹, K. Kurishima¹, M. Ida¹, H. Matsuzaki¹ (1.NTT Corp.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 1:30 PM - 2:00 PM |PDF Download

[N-1-02] Contact resistivity to C-doped (In)GaAsSb with Ti/Pt/Au and Pt/Ti/Pt/Au

^○T. Hoshi¹, N. Kashio², Y. Shiratori¹, H. Sugiyama¹, K. Kurishima¹, M. Ida¹, H. Matsuzaki¹ (1.NTT Device Tech. Labs.(Japan), 2.NTT Device Innovation Center(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:00 PM - 2:15 PM |PDF Download

[N-1-03] Demonstration of p-Channel HfO₂/GaSb MOSFETs by Using In-Situ Hydrogen Plasma Treatment

^○C. Ko¹, M. Tsai¹, C. Chien¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:15 PM - 2:30 PM |PDF Download

734 results (271 - 280)

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