[PS-1-01] Structural and Electrical Characterization of Epitaxial Ge Thin Film on Si (001) Formed by Sputtering

^○S. Otsuka¹, T. Mori¹, Y. Morita¹, N. Uchida¹, Y. Liu¹, S. O’uchi¹, H. Fuketa¹, S. Migita¹, M. Masahara¹, T. Matsukawa¹ (1.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-02] Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition

^○S. Ike^1,2, W. Takeuchi¹, O. Nakatsuka¹, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.Research Fellow of JSPS(Japan), 3.IMaSS, Nagoya Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-03] Formation Technology of Flat Surface after Selective-Epitaxial-Growth on Ion-implamted (100) Oriented Thin SOI Wafers

^○K. Furukawa¹, A. Teramoto¹, R. Kuroda¹, T. Suwa¹, K. Hashimoto¹, S. Sugawa¹, D. Suzuki², Y. Chiba², K. Ishii², A. Shimizu², K. Hasebe² (1.Tohoku Univ.(Japan), 2.Tokyo Electron Tohoku Ltd.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-04] Impact of Si_xGe₁₋_x₋_ySn_y Interlayer on Reduction in Schottky Barrier Height of Metal/n-Ge Contact

^○A. Suzuki^1,2, S. Toda¹, O. Nakatsuka¹, M. Sakashita¹, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.Research Fellow of JSPS(Japan), 3.IMaSS, Nagoya Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-05] Self-Aligned Deposition of Source/Drain Contact Metal with Electrodeposition Technique for High Performance Schottky Barrier Ge MOSFETs Fabrication

^○D. Zhai¹, J. Jiang^1,2, J. Li¹, X. Yu¹, R. Zhang¹, Y. Zhao¹ (1.Zhejiang Univ.(China), 2.The:51th Res. Inst. of China Electronics Tech. Group Corp.(China))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-06] Influence of Low Thermal Budget Plasma Oxidation and Millisecond Laser Anneal on Gate Stack Reliability in view of 3D Sequential Integration

^○C. -M. V. Lu^1,2, C. Fenouillet-Béranger¹, R. Gassilloud¹, H. Graoui³, D. Larmagnac⁴, S. Sharma³, X. Garros¹, C. Leroux¹, A. Toffoli¹, G. Romano^1,2, R. Kies¹, N. Rambal¹, M. -P. Samson², B. Previtali¹, C. Guedj¹, N. Bernier¹, S. Kerdiles¹, L. Brunet¹, P. Batude¹, T. Skotnicki², M. Vinet¹ (1.CEA-LETI(France), 2.STMicroelectronics(France), 3.Applied Materials Inc.(USA), 4.Applied Materials France(France))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-07] Integration of Low Temperature 480℃ SiOCN as Offset Spacer in view of 3D Sequential Integration

^○C. -M. V. Lu^1,2, C. Fenouillet-Béranger¹, C. Bout¹, A. Roule¹, V. Beugin¹, J. Fort³, C. Arvet², N. Posseme¹, V. Loup¹, P. Besson², M. -P. Samson², B. Previtali¹, C. Tabone¹, A. Michallet², N. Rochat¹, D. Benoit², F. Pierre¹, L. Brunet¹, P. Batude¹, T. Skotnicki², M. Vinet¹ (1.CEA-LETI(France), 2.STMicroelectronics(France), 3.Applied Materials France(France))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-08] Enhanced Electrical and Reliability Characteristics in Ge p-MOSFETs by In-situ Plasma Treatments and Capping Hf/Zr on Interfacial Layers

^○T. Huang¹, C. Hsu¹, K. S. Chang-Liao¹, Y. Hsu¹, C. Huang¹, Y. Li¹ (1.National Tsing Hua Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-09] Novel GeO_x Interface Layer Engineering by Ultra Low Power Microwave Plasma Oxidation

^○K. Shiraga¹, J. Miyahara², G. Nakamura¹, Y. Fujino¹, K. Akiyama¹, K. Tapily³, T. Harada¹, E. Hara¹, A. Tanihara¹, N. Yamamoto¹, Y. Hirota¹, T. Kaitsuka¹, T. Morimoto¹, K. Hasebe¹ (1.Tokyo Electron Ltd.(Japan), 2.Tokyo Electron Yamanashi Ltd.(Japan), 3.TEL Technology Center(USA))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-1-10] Charge Retention and Stability of Metal Nano Dots in SiO₂; First-principles Study on Metal Dependence

^○S. Yamazaki¹, Y. Asayama¹, Y. Onda¹, T. Nakayama¹ (1.Chiba Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download