[D-2-05] Improvement of Contacts on Etched p-type GaN by Low-bias ICP–RIE

〇Takeru Kumabe¹, Yuto Ando¹, Hirotaka Watanabe², Yoshio Honda², Manato Deki^1,3, Atsushi Tanaka^2,4, Shugo Nitta², Hiroshi Amano^2,3,4,5 (1. Grad. Sch. of Eng. Nagoya Univ.(Japan), 2. IMaSS Nagoya Univ.(Japan), 3. VBL Nagoya Univ.(Japan), 4. NIMS(Japan), 5. ARC Nagoya Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 17:15 〜 17:30 |PDF ダウンロード

[D-2-06] Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy -- Comparison between n- and p-type GaN samples --

〇Ryo Matsuda¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Noboru Fukuhara², Tomoyoshi Mishima³, Kenji Shiojima¹ (1. Univ. of Fukui(Japan), 2. SCIOCS(Japan), 3. Hosei Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 17:30 〜 17:45 |PDF ダウンロード

[D-3-01 (Invited)] Recent Advances in GaN Power Amplifier Design for Millimeter-Wave Applications

〇Jun Kamioka¹, Keigo Nakatani¹, Yutaro Yamaguchi¹, Shintaro Shinjo¹ (1. Mitsubishi Electric Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 09:00 〜 09:30 |PDF ダウンロード

[D-3-02 (Invited)] Breaching the 70 % Efficiency Plateau: a Mixed-Signal Approach to RF-PA Design

〇Atsushi Yamaoka¹, Thomas Hone¹, Keiichi Yamaguchi¹ (1. Toshiba Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 09:30 〜 10:00 |PDF ダウンロード

[D-3-03 (Invited)] Future of 300-GHz-Band Wireless Communications and Their Enabler, CMOS Transceiver Technologies

〇Minoru Fujishima¹ (1. Hiroshima Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 10:00 〜 10:30 |PDF ダウンロード

[D-4-01] Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals

〇Masahiro Hara¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1. Kyoto Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 11:00 〜 11:15 |PDF ダウンロード

[D-4-02] High electron mobility along the c-axis in 4H-SiC

〇Ryoya Ishikawa¹, Masahiro Hara¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1. Kyoto Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 11:15 〜 11:30 |PDF ダウンロード

[D-4-03] Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate

〇Qimin Jin¹, Masashi Nakajima¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1. Kyoto University(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 11:30 〜 11:45 |PDF ダウンロード

[D-4-04] Single Shockley Stacking Fault Expansion from Immobile Basal Plane Dislocations in 4H-SiC

〇Johji Nishio¹, Aoi Okada¹, Chiharu Ota¹, Ryosuke Iijima¹ (1. Toshiba Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 11:45 〜 12:00 |PDF ダウンロード

[D-4-05] Automatic Detection of Dislocation contrasts in Birefringence Image of SiC Wafers Using Variance Filter Method

Akira Kawata¹, Kenta Murayama², Shogo Sumitani^1,3, 〇Shunta Harada⁴ (1. Kyoto University(Japan), 2. Mipox Coroporation(Japan), 3. Anamorphosis Networks(Japan), 4. Nagoya University(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 12:00 〜 12:15 |PDF ダウンロード