[I-5-04] Dark-state impact on the exciton recombination of monolayer WS₂ embedded in van der Waals heterostructures

〇Takashi Kuroda¹, Yusuke Hoshi^2,3, Kenji Watanabe¹, Takashi Taniguchi^1,3, Ryo Kitaura⁴, Tomoki Machida³ (1. National Inst. for Materials Sci.(Japan), 2. Tokyo City Univ.(Japan), 3. Univ. of Tokyo(Japan), 4. Nagoya Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 15:00 〜 15:15 |PDF ダウンロード

[I-5-05 (Late News)] Light- and Heavy-Hole Valence Bands of Si/Si_0.7Ge_0.3 Nanopillars Fabricated by Neutral Beam Etching

〇Min-Hui Chuang¹, Yiming Li¹, seiji Samukawa^2,1 (1. National Chiao Tung University(Taiwan), 2. Tohoku Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 15:15 〜 15:30 |PDF ダウンロード

[I-6-01 (Invited)] Quantum computing with silicon and germanium: hot and fast

〇Menno Veldhorst¹ (1. TU Delft(Netherlands))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 16:00 〜 16:30 |PDF ダウンロード

[I-6-02] Readout of Charge States in a Physically Defined PMOS Silicon Quantum Dot via RF Reflectometry

〇Sinan Bugu¹, Shimpei Nishiyama^1,2, Kimihiko Kato², Yongxun Liu², Takahiro Mori², Tetsuo Kodera¹ (1. Tokyo Inst. of Tech.(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 16:30 〜 16:45 |PDF ダウンロード

[I-6-03] Mechanism of Gate-Length Dependence of Quantum Dot Operation in Isoelectronic-Trap-Assisted Tunnel FETs

〇Shota Iizuka¹, Hidehiro Asai¹, Kimihiko Kato¹, Junichi Hattori¹, Koichi Fukuda¹, Takahiro Mori¹ (1. AIST(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 16:45 〜 17:00 |PDF ダウンロード

[I-6-04] Direct imaging of crystallographic tilting for valley-controlled Si/SiGe qubits

〇Koichi Takeuchi¹, Satoru Miyamoto^1,2, Kohei M. Itoh², Noritaka Usami¹ (1. Nagoya Univ.(Japan), 2. Keio Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 17:00 〜 17:15 |PDF ダウンロード

[I-6-05] Characterization of a surface plasmon antenna fabricated on a gate-defined lateral quantum dot

〇Rio Fukai¹, Yuji Sakai¹, Tomohiro Nakagawa¹, Takafumi Fujita^1,2, Haruki Kiyama^1,2, Arne Ludwig³, Andreas Dirk Wieck³, Akira Oiwa^1,2 (1. The Inst. of Sci. and Indus. Res., Osaka Univ.(Japan), 2. Center for Quantum Info. and Quantum Biology, Inst. for Open and Transdisciplinary Res. Initiatives, Osaka Univ.(Japan), 3. Ruhr Univ. Bochum(Germany))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 17:15 〜 17:30 |PDF ダウンロード

[I-6-06] Direct estimation of the energy gap between the ground state and excited state with quantum annealing

〇Yuichiro Matsuzaki¹, Hideaki Hakoshima¹, Kenji Sugisaki², Yuya Seki¹, Shiro Kawabata¹ (1. National Institute of Advanced Industrial Science and Technology(Japan), 2. Osaka City University(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 17:30 〜 17:45 |PDF ダウンロード

[J-1-01 (Invited)] High performance electronics based on 2D materials and ultrathin ITO

〇Yanqing Wu¹ (1. Peking University(China))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 14:00 〜 14:30 |PDF ダウンロード

[J-1-02] Realization of a High-mobility Two-dimensional Hole Gas at a SrTiO₃ Interface and Control of the Carrier Type

〇Le Duc Anh^1,2,3, Shingo Kaneta-Takada¹, Masashi Tokunaga⁴, Munetoshi Seki^1,5, Hitoshi Tabata^1,5, Masaaki Tanaka^1,5, Shinobu Ohya^1,2,5 (1. Dept. of Electrical Engineering and Information Systems, Univ. of Tokyo(Japan), 2. Inst. of Engineering Innovation, Univ. of Tokyo(Japan), 3. PRESTO, JST(Japan), 4. Inst. for Solid State Physics, Univ. of Tokyo(Japan), 5. Center for Spintronics Research Network (CSRN), Univ. of Tokyo(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 14:30 〜 14:45 |PDF ダウンロード