[B-10-03] 80nm Tall Thermally Stable Cost Effective FinFETs for Advanced DRAM Periphery Devices for AI/ML and Automotive Applications

〇Alessio Spessot¹, Romain Ritzenthaler¹, Eugenio Dentoni Litta¹, Emmanuel Dupuy¹, Barry O’Sullivan¹, Joao Bastos¹, Elena Capogreco¹, Kenichi Miyaguchi¹, Vladimir Machkaoutsan², Younggwang Yoon³, Pierre Fazan², Horiguchi Naoto¹ (1. imec(Belgium), 2. Micron (Belgium), 3. SK Hynix(Belgium))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 16:30 〜 16:45 |PDF ダウンロード

[B-10-04 (Invited)] Overcoming the Endurance-Retention Trade-Off in CBRAM: the Introduction of Co as Active Electrode

〇Attilio Belmonte¹ (1. imec(Belgium))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 16:45 〜 17:15 |PDF ダウンロード

[B-10-05] In situ TEM Observation of CBRAMs during Digital and Analog Switching

〇Satoshi Muto¹, Tsutomu Nakajima¹, Atushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1. Hokkaido Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 17:15 〜 17:30 |PDF ダウンロード

[B-10-06 (Late News)] Designing a Filament in Resistive Random Access Memory Based on Thermal Flow Control

〇Yuta Sasaki¹, Kentaro Kinoshita¹ (1. Tokyo Univ. of Sci.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月30日(水) 17:30 〜 17:45 |PDF ダウンロード

[B-2-01] Impact of Zr Concentration on Time-Dependent Dielectric Breakdown of HfZrO-based Ferroelectric Tunnel Junction (FTJ) Memory

〇Marina Yamaguchi¹, Kensuke Ota¹, Shosuke Fujii¹, Reika Ichihara¹, Kazuhiro Matsuo¹, Kota Takahashi¹, Yuta Kamiya¹, Masumi Saitoh¹ (1. Kioxia Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 16:00 〜 16:15 |PDF ダウンロード

[B-2-02] Resistive switching in two-terminal HfO₂/SiO₂ stack with interface dipole modulation

〇Noriyuki - Miyata¹, Kyoko Sumita¹, Akira Yasui², Reito Wada³, Hiroshi Nohira³ (1. AIST(Japan), 2. JASRI(Japan), 3. Tokyo City University(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 16:15 〜 16:30 |PDF ダウンロード

[B-2-03] New Material Approach to Enhance Spontaneous Polarization in Ferroelectric HfO₂

〇Kota Takahashi¹, Kazuhiro Matsuo¹, Yuta Kamiya¹, Kunifumi Suzuki¹, Kiwamu Sakuma¹, Masumi Saitoh¹ (1. Kioxia Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 16:30 〜 16:45 |PDF ダウンロード

[B-2-04] Antiferroelectricity and Cycling Behavior of ALD ZrO₂ Ultra-thin Films

〇Xuan Luo¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 16:45 〜 17:00 |PDF ダウンロード

[B-2-05 (Invited)] Introduction to FeFET Technology

〇Sven Beyer¹ (1. GrobalFoundaries(Germany))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 17:00 〜 17:30 |PDF ダウンロード

[B-2-06] Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Fluctuations due to Trapped Charges

〇You Sheng Liu¹, Pin Su¹ (1. National Chiao Tung University(Taiwan))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 17:30 〜 17:45 |PDF ダウンロード