[D-6-01] Low voltage operation of organic thin-film transistor with atmospheric coating of high-k polymer dielectric

^○Kazunari Kuribara¹, Atsushi Takei¹, Takashi Sato², Manabu Yoshida¹ (1. the National Inst. of Advanced Indus. Sci. and Tech. (Japan), 2. Kyoto University (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 10:45 AM - 11:00 AM |PDF Download

[D-6-02] Threshold Voltage Control of Organic Transistors Using Liquid Crystalline Organic Semiconductor Ph-BTBT-10 by Doping

^○Shun Takamaru¹, Jun-ichi Hanna¹, Hiroaki Iino¹ (1. Tokyo Tech. (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 11:00 AM - 11:15 AM |PDF Download

[D-6-03] Nonvolatile Operation of Resistive Memory with Ionic Liquid Crystal Thin Film as Switching Layer

^○wenzhong zhang¹, Haruka Komatsu¹, Shingo Maruyama¹, Kenichi Kaminaga¹, Yuji Matsumoto¹ (1. Tohoku Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 11:15 AM - 11:30 AM |PDF Download

[D-6-04] Enhancement of Thermoelectric Properties in Carbon-Nanotube Yarns by an Improved Dispersion Method

^○ANH NGOC NGUYEN¹, Naofumi Okamoto¹, Yongyoon Cho¹, Ryo Abe¹, Nikita Kumari¹, Manish Pandey¹, Hiroaki Benten¹, Masakazu Nakamura¹ (1. NAIST (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 11:30 AM - 11:45 AM |PDF Download

[D-6-05] Thermoelectric Properties Temperature Dependence of Electrical Conductivity and Seebeck Coefficient in Electrochemically Electrochemically-Doped Conducting Polymer PBTTT

^○Shun- ichiro Ito¹, Kaito Kanahashi², Hisaaki Tanaka¹, Binjie Chen³, Hiromichi Ohta⁴, Taishi Takenobu¹ (1. Nagoya Univ. (Japan), 2. Univ. of Tokyo (Japan), 3. IST-Hokkaido Univ. (Japan), 4. RIES-Hokkaido Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 11:45 AM - 12:00 PM |PDF Download

[D-6-06 (Late News)] Blended MXene-Polythiophene Semiconducting Network for Solution-Processed Nanocomposite Field-Effect Transistor

^○YU-SHENG ZHOU¹, Gen-Wen Hsieh¹ (1. Univ. of National Yang Ming Chiao Tung (Taiwan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 12:00 PM - 12:15 PM |PDF Download

[E-3-01] Improvement of Cell Transistors in High-k/ Metal-Gate Peripheral Transistors DRAM Technology for High Performance Graphic Memories

^○Dongkyu Jang¹, Jieun Lee¹, Daekyum Kim¹, Kyoungrock Nho¹, Inkyum Lee¹, Shindeuk Kim¹, Taehoon Park¹ (1. Samsung Electronics Corp. (Korea))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 9:00 AM - 9:15 AM |PDF Download

[E-3-02] Novel Stacked Gate All-Around Nanosheet Transistor-Based DRAM

^○Imtiyaz Ahmad khan¹, Sanjeev Kumar Manhas¹, Arvind Kumar², Mahendra Pakala² (1. Indian Inst. of Tech. Roorkee (India), 2. Applied Materials Inc. (United States of America))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 9:15 AM - 9:30 AM |PDF Download

[E-3-03] Exploring Vertical DRAM Architecture using Advanced Pathfinding Techniques

^○TaeYeon Oh¹ (1. LAM RESEARCH (Korea))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 9:30 AM - 9:45 AM |PDF Download

[E-3-04] "A Novel Solution to improve Static and Dynamic Retention Characteristics by Enhancing Hydrogen Passivation with in-situ LD-TEOS/TEOS Dual Layer"

^○JIEUN LEE¹, Dongkyu Jang¹, Inkyum Lee¹, Shindeuk Kim¹, Taehoon Park¹, Hyeongsun Hong¹ (1. Samsung Electronics Corp. (Korea))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 9:45 AM - 10:00 AM |PDF Download