[18p-B11-1~14] 13.5 デバイス／配線／集積化技術

▲ [18p-B11-2] Demonstration of HfO₂ based Ferroelectric FET with Ultrathin-body IGZO for High-Density Memory Application

〇(D)FEI MO¹、Yusaku Tagawa²、Chengji Jin¹、MinJu Ahn¹、Takuya Saraya¹、Toshiro Hiramoto¹、Masaharu Kobayashi¹ (1.IIS, the Univ. of Tokyo、2.The Univ. of Tokyo)

キーワード：IGZO, ferroelectric, non-volatile memory

A junctionless FeFET with very thin IGZO channel and HfZrO₂ (HZO) is proposed for 3D vertical structure to overcome the problems of poly-Si channel, such as low mobility of very thin poly-Si channel, V_th compensation and degraded subthreshold slope (SS) by charge trapping, and voltage loss by low-k interfacial layer on Si channel. We design and fabricate the device and demonstrate its potential as a lower power, high density memory device.