[18p-B11-1~14] 13.5 デバイス／配線／集積化技術

▼ [18p-B11-9] Influence of hydrogen ion implantation dose on characteristics of Ge-on-insulator substrates fabricated by smart-cut technology

〇CheolMin Lim¹、Ziqiang Zhao¹、Kei Sumita¹、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. of Tokyo)

キーワード：Ge-on-insulator, Smart-cut, Ion implantation

The effect of the hydrogen ion implantation dose on the physical and electrical characteristics of the GOI layers fabricated the smart-cut process was experimentally investigated. The high I/I dose (1×10¹⁷ cm^-2) condition has been found to cause more damages resulting in the degradation of the hole mobility than the low I/I dose (4×10¹⁶ cm^-2) condition