[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Mar 15, 2023 9:30 AM - 11:30 AM A301 (Building No. 6)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

△ [15a-A301-1] Relationship between Charge States of Silicon Vacancies in 4H-SiC and Doping Concentrations

〇Shengjie Zhang^1,2, Shin-ichiro Sato¹, Koichi Murata³, Masafumi Hanawa³, Shu Motoki^2,1, Qihang Zhang^1,2, Hidekazu Tsuchida³, Yasuto Hijikata², Takeshi Ohshima¹ (1.QST, 2.Saitama Univ., 3.CRIEPI)

9:45 AM - 10:00 AM

△ [15a-A301-2] Formation and Characterization of High Concentration of Nitrogen-Vacancy Complex Defects in 4H-SiC by Electron Beam Irradiation

〇Qihang Zhang^1,2, Shin-ichiro Sato², Koichi Murata³, Masafumi Hanawa³, Shu Motoki^1,2, Shengjie Zhang^1,2, Hidekazu Tsuchida³, Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST, 3.CRIEPI)

10:00 AM - 10:15 AM

△ [15a-A301-3] Correlation between density of color centers at SiO₂/SiC interfaces and MOS interface properties

〇Takato Nakanuma¹, Kosuke Tahara², Taishi Kimura², Katsuhiro Kutsuki², Takayoshi Shimura¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.Osaka Univ., 2.Toyota Central R&D Labs. Inc.)

10:15 AM - 10:30 AM

△ [15a-A301-4] Identification of threading mixed dislocations in SiC substrates by polarized light observation

〇Yasutaka Matsubara¹, Kenta Murayama², Shunta Harada¹ (1.Nagoya Univ., 2.Mipox)

10:30 AM - 10:45 AM

[15a-A301-5] 3D observation of dislocations inside SiC using a focused polarized laser

Hisaya Sato¹, Tomohisa Kato², Shunta Harada³, 〇Masashi Kato¹ (1.NITech, 2.AIST, 3.Nagoya Univ.)

10:45 AM - 11:00 AM

[15a-A301-6] Development of 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography

〇Junji Senzaki¹, Junichi Nishino¹, Tsutomu Osanai¹, Hiroshi Yamaguchi¹ (1.AIST)

11:00 AM - 11:15 AM

[15a-A301-7] Effect of basal plane dislocation structure on 1SSF expansion rate in 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba R&D Center)

11:15 AM - 11:30 AM

△ [15a-A301-8] Studies on Warpage and Basal Plane Dislocation of Thick SiC Epitaxial Wafers with a Diameter of 150 mm

〇Fumihiro Fujie¹, Koichi Murata¹, Tsubasa Shiono², Naoto Ishibashi², Yuichiro Mabushi², Hidekazu Tsuchida¹ (1.CRIEPI, 2.Resonac Corp.)

Session information

[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

△ [15a-A301-1] Relationship between Charge States of Silicon Vacancies in 4H-SiC and Doping Concentrations

△ [15a-A301-2] Formation and Characterization of High Concentration of Nitrogen-Vacancy Complex Defects in 4H-SiC by Electron Beam Irradiation

△ [15a-A301-3] Correlation between density of color centers at SiO₂/SiC interfaces and MOS interface properties

△ [15a-A301-4] Identification of threading mixed dislocations in SiC substrates by polarized light observation

[15a-A301-5] 3D observation of dislocations inside SiC using a focused polarized laser

[15a-A301-6] Development of 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography

[15a-A301-7] Effect of basal plane dislocation structure on 1SSF expansion rate in 4H-SiC

△ [15a-A301-8] Studies on Warpage and Basal Plane Dislocation of Thick SiC Epitaxial Wafers with a Diameter of 150 mm

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Session information

[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

△ [15a-A301-1] Relationship between Charge States of Silicon Vacancies in 4H-SiC and Doping Concentrations

△ [15a-A301-2] Formation and Characterization of High Concentration of Nitrogen-Vacancy Complex Defects in 4H-SiC by Electron Beam Irradiation

△ [15a-A301-3] Correlation between density of color centers at SiO2/SiC interfaces and MOS interface properties

△ [15a-A301-4] Identification of threading mixed dislocations in SiC substrates by polarized light observation

[15a-A301-5] 3D observation of dislocations inside SiC using a focused polarized laser

[15a-A301-6] Development of 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography

[15a-A301-7] Effect of basal plane dislocation structure on 1SSF expansion rate in 4H-SiC

△ [15a-A301-8] Studies on Warpage and Basal Plane Dislocation of Thick SiC Epitaxial Wafers with a Diameter of 150 mm

Authenticate

△ [15a-A301-3] Correlation between density of color centers at SiO₂/SiC interfaces and MOS interface properties