[15a-B410-1~9] 13.4 Si系プロセス・Si系薄膜・MEMS・装置技術

▲ [15a-B410-1] Investigation of the Gate Oxide of Si MOS Devices Fabricated Using Minimal Fab Laser Annealing Tool

〇Mickael Lozach¹、Kazushige Sato^1,2、Sommawan Khumpuang^1,3、Shiro Hara^1,3,4 (1.Minimal Fab、2.Sakaguchi E.H. VOC、3.AIST、4.Hundred)

キーワード：Gate oxide, lifetime, Laser annealing

We investigate the quality of the gate oxide of silicon MOS devices fabricated using Minimal Fab laser annealing tool and compared it to a gate oxide fabricated by Minimal Fab furnace heating. To characterize the two types of heating processes, the lifetime of minority carriers measured by micro-photoconductance decay (μ-PCD) is performed to evaluate the passivation quality. A higher lifetime is related to a lower density of interface states (D_it) between the oxide gate and the silicon substrate. Besides, the optical properties are measured by spectroscopic ellipsometry (SE) and the Si-O binding is evaluated by Fourier Transform Infra-Red (FTIR). Minimal Fab is an advanced, cost-effective, semiconductor fab where the area that requires a clean environment is minimized to the surrounding of the silicon wafers (diameter of 12.5 mm), encapsulated in a shuttle (wafer vehicle) and cleaned process chambers during the full fabrication process.