Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[15a-B410-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Wed. Mar 15, 2023 9:00 AM - 11:30 AM B410 (Building No. 2)

Tatsuya Okada(Univ. of the Ryukyus), Yan Wu(Nihon Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [15a-B410-1] Investigation of the Gate Oxide of Si MOS Devices Fabricated Using Minimal Fab Laser Annealing Tool

〇Mickael Lozach¹, Kazushige Sato^1,2, Sommawan Khumpuang^1,3, Shiro Hara^1,3,4 (1.Minimal Fab, 2.Sakaguchi E.H. VOC, 3.AIST, 4.Hundred)

9:15 AM - 9:30 AM

[15a-B410-2] Evaluation of Variation in Sheet Resistance of MOSFET using Minimal-Fab Spin-on Dopant Process

〇Shuhei Nakamichi¹, Hiroyoshi Hongoh¹, Noriko Miura¹, Fumito Imura^2,3, Sommawan Khumpuang^1,2, Shiro Hara^1,2,3 (1.MinimalFab, 2.AIST, 3.Hundred)

9:30 AM - 9:45 AM

[15a-B410-3] Investigation of Shrinkage of Overlap Length of SOI CMOS of Minimal Fab

〇Takeshi Hamamoto¹, Yuji Kitayama³, Satoshi Maruyama³, Sommawan Khumpuang^1,2, Yasunari Shiba³, Shiro Hara^1,2,4 (1.MINIMAL, 2.AIST, 3.Yokogawa Solution, 4.Hundred)

9:45 AM - 10:00 AM

[15a-B410-4] Development of Minimal Fab laser heating tool for low-temperature processing at 300 - 600℃

〇kazushige sato^1,3, Takashi Chiba^1,3, Masao Terada^1,3, Kengo Hamada^1,3, Sommawan Khumpuang^1,2, Shiro Hara^1,2,4 (1.MINIMAL, 2.AIST, 3.Sakaguchi E.H VOC Corp., 4.Hundred)

10:15 AM - 10:30 AM

[15a-B410-5] Study on taper angle control in Silicon via hole etching

〇Hiroyuki Tanaka¹, Hiroshi Tokunaga², Yoshiyuki Nozawa³, Toshihiro Hayami³, Khumpuang Sommawan^1,4, Shiro Hara^1,4,5 (1.AIST, 2.MTC, 3.SPPT, 4.MINIMAL, 5.Hundred)

10:30 AM - 10:45 AM

[15a-B410-6] Highly efficient rinsing method in spin droplet cleaning technology

〇Kazumasa Nemoto¹, Takashi Yajima¹, Noriko Miura², Kazushige Sato², Sommawan Khumpuang^1,2, Shiro Hara^1,2,3 (1.AIST, 2.Minimal Fab, 3.Hundred)

10:45 AM - 11:00 AM

[15a-B410-7] Formation of RDL (Re-Distribution Layer) on Epoxy Molding Compound by Semi-Additive Process

〇Fumito Imura^1,2, Mitsuru Ozono¹, Sommawan Khumpuang^1,3, Shiro Hara^1,2,3 (1.AIST, 2.Hundred, 3.MINIMAL)

11:00 AM - 11:15 AM

[15a-B410-8] Stabilization of phosphorus diffusion in P-SOG process in Minimal Fab

〇Masashi Kase¹, Khumpuang Sommawan^1,2, Shirou Hara^1,2,3 (1.AIST, 2.MINIMAL, 3.HUNDRED)

11:15 AM - 11:30 AM

[15a-B410-9] Development of Minimal Fab Ion Implantation Tool (IV)

〇Noriko Miura¹, Naoki Hashimoto², Yoshitaka Kitamura², Fumito Imura^3,4, Yuuki Ishida^1,3, Sommawan Khumpuang^1,3, Shiro Hara^1,3,4 (1.MINIMAL, 2.FUJI IMVAC INC., 3.AIST, 4.Hundred)

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