[15p-A404-1~19] 6.1 強誘電体薄膜

▼ [15p-A404-5] Effects of plasma damage reduction for Pt gate electrode deposition on the variation of MFSFET characteristics with ferroelectric nondoped HfO₂

〇(D)JoongWon Shin¹、Masakazu Tanuma¹、Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

キーワード：Ferroelectric nondoped HfO2 gate insulator, MFSFET, plasma damage

Ferroelectric HfO₂ film is a promising candidate to realize the metal-ferroelectric-semiconductor field-effect-transistors (MFSFETs) due to its CMOS compatibility and scalability. Previously, we realized the MFSFET with 5-nm-thick ferroelectric nondoped HfO₂ (FeND-HfO₂) directly formed on Si(100) substrates using Kr/O₂-plasma sputtering. The ferroelectric property was improved by decreasing the plasma damage for Pt electrode deposition. However, the device variation is still issue for highly integrated nonvolatile memory (NVM) application since it decreases the accuracy. In this research, we investigated the effects of plasma damage reduction for Pt gate electrode deposition on the variation of ferroelectric property of MFSFET with FeND-HfO₂ gate insulator.