[A-0-1] One Hundred Years of Semiconductor-Device Developments (1874-1974)

S. M. Sze (1.Institute of Electronics National Chiao Tung University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-0-2] A Perspective on Next Generation Silicon Devices

Takuo SUGANO (1.Department of Electrical and Electronic Engineering, Toyo University &, 2.Institute of Physical and Chemical Research)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-0-3] Optoelectronic Device and Material Technologies for Photo-Electronic Integrated Systems

Izuo Hayashi (1.Optoelectronics Technology Research Laboratory)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-1-1] A New Horizon of Plasma Enhanced CVD for Future Electron Devices

M. Hirose, H. Shin, S. Miyazaki (1.Department of Electrical Engineering, Hiroshima University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] Low-Temperature (625℃) Silicon Epitaxial Growth on Silicon Substrates Heated-Up in SiH4 Atmosphere

K. Kobayashi, K. Fukumoto, T. Katayama, T. Higaki, H. Abe (1.LSI Laboratory, Mitsubishi Electric Corp.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Silicon Epitaxial Growth by a Fast Wafer Rotating Reactor Using Silane Gas

Yuusuke SATO, Tamami TAMURA, Toshimitsu OHMINE (1.Toshiba R&D Center, Toshiba Corporation, 2.Toshiba Corporation Fuchu Works)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

H. Ishiwara, H. Wakabayashi, K. Miyazaki, K. Fukao, A. Sawaoka (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology, 2.Canon Inc., R/D, 3.Kanagawa works Hitachi Ltd., 4.Engineering Materials Laboratory, Tokyo Institute of Technology)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] Control of Interstitial Density in the Preamorphized Si by Carbon Implantation

Satoshi Nishikawa, Tetsuo Yamaji (1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Control of Si Solid-Phase Nucleation by Surface Steps for High Performance Thin Film Transistors

Tanemasa Asano, Kenji Makihira (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Solid-Phase Nucleation Control of Amorphous Si by Step-Structure of Substrate Surface and Local P-Doping

M. Moniwa, K. Kusukawa, M. Ohkura, E. Takeda (1.Central Research Laboratory, Hitachi Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download