n-SiC Structure Using Scanning Internal Photoemission Microscopy

^○K. Shiojima¹, T. Hashizume¹, M. Sato², M.B. Takeyama² (1.Univ. of Fukui (Japan), 2.Kitami Inst. of Tech. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:55 PM - 4:56 PM |PDF Download

[PS-3-08] High Sensitivity Hall-Effect Sensor on the AlGaN/GaN Fin-HEMT Structure

^○Y.C. Liang^1,2, K. Ren¹, S.J. Chua¹, Z. Wang¹, X. Gong¹ (1.National University of Singapore (Singapore), 2.National University of Singapore, Suzhou Research Institute (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:56 PM - 4:57 PM |PDF Download

[PS-3-09 (Late News)] Withdrawn

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:57 PM - 4:58 PM

[PS-3-10 (Late News)] Deposition of SiC Thin Films and Carbon Tips Growth onto SiC Thin Films for NSOM Applications

^○S.-H. Nam¹, J.-H. Yu², H.J. Seo², D.I. Kim², J.W. Lee^1,2, R.H. Jeong^1,2, Y.E. Gil², J.-H. Boo^1,2 (1.Inst. of Basic Sci., Sungkyunkwan Univ. (Korea), 2.Department of Chemistry, Sungkyunkwan Univ. (Korea))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:58 PM - 4:59 PM |PDF Download

[PS-3-11 (Late News)] Gas Phase Pore Stuffing for Damage Mitigation during Plasma Etching

^○T. Yamaguchi¹, S. Nozawa¹, M. Fujikawa¹, J.-F. de Marneffe², R. Chanson², K.B. Gavan², A. Rezvanov², Fr. Lazzarino² (1.Tokyo Electron Tchnology Solutions Ltd. (Japan), 2.Imec v.z.w. (Belgium))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:59 PM - 5:00 PM |PDF Download

[PS-4-01] Room Temperature GaN Bonding by Surface Activated Bonding Method

^○F. Mu¹, T. Suga¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:30 PM - 4:31 PM |PDF Download

[PS-4-02] Wet-chemical Cleaning of Epitaxial GaN(0001) Surfaces

^○L. Peng¹, A. Ohta¹, N.X. Truyen¹, M. Ikeda¹, K. Makihara¹, N. Taoka², T. Narita³, K. Itoh³, D. Kikuta³, K. Shiozaki⁴, T. Kachi⁴, S. Miyazaki¹ (1.Grad. School of Eng., Nagoya Univ. (Japan), 2.AIST GaN-OIL (Japan), 3.Toyota Central R&D Labs. (Japan), 4.IMaSS, Nagoya Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:31 PM - 4:32 PM |PDF Download

[PS-4-03] Analysis of Deep Traps at Al₂O₃/n-GaN Interface using Photo-assisted C-V Measurement

^○K. Yuge^1,2, T. Nabatame², Y. Irokawa², A. Ohi², N. Ikeda², A. Uedono³, L. Sang², Y. Koide², T. Ohishi¹ (1.Shibaura Inst. of Tech. (Japan), 2.NIMS (Japan), 3.Univ. of Tsukuba (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:32 PM - 4:33 PM |PDF Download

[PS-4-04] Origin of Border Traps in Normally-off Al₂O₃/GaN MOSFET with Different Gate Recess Techniques

^○R. Yin¹, Y. Li¹, Y. Sun¹, C.P. Wen¹, Y.L. Hao¹, M.J. Wang¹ (1.Peking Univ. (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:33 PM - 4:34 PM |PDF Download

[PS-4-05] Low Ohmic Contact Resistance on AlGaN/GaN Heterostructures Based on Ti/Al/Ti/TiN Metal Stacks

^○H. Sun¹, J. Chen², P. Liu¹, D. Chen¹ (1.Peking University (China), 2.Founder Microelectronics International Co., Ltd. (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:34 PM - 4:35 PM |PDF Download