[J-4-05] Lateral growth of single crystal strip in Si film above bottom gate for high mobility thin-film transistors

〇Wenchang Yeh¹、Kaisei Ohtoge¹ (1.Shimane Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:36 〜 11:43 |PDF ダウンロード

[J-4-06] Characteristics of Millisecond Solid Phase Crystallized Silicon Films Formed by Micro-Thermal-Plasma-Jet and Their Application to Bottom-Gate Thin Film Transistor

〇Hoa ThiKhanh Nguyen¹、Hiroaki Hanafusa¹、Ryuji Kawakita¹、Kazuki Segawa¹、Seiichiro Higashi¹ (1.Hiroshima Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:43 〜 11:50 |PDF ダウンロード

[J-4-07] Effects of Crystallization Conditions on the Electrical Characteristics of P-type Ge TFTs Formed by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation

〇Takuma SATO¹、Hiroaki HANAFUSA¹、Seiichiro HIGASHI¹ (1.Hiroshima Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:50 〜 11:57 |PDF ダウンロード

[J-4-08] Sn Doping Effects on Polycrystalline Germanium Thin-Film Transistors on Glass

〇Kenta Moto^1,2、Keisuke Yamamoto¹、Toshifumi Imajo^2,3、Takashi Suemasu³、Hiroshi Nakashima¹、Kaoru Toko³ (1.Kyushu Univ.、2.JSPS Research Fellow、3.Univ. of Tsukuba)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:57 〜 12:04 |PDF ダウンロード

[J-5-01 (Invited)] Complementary Thin-Film Transistor Technology Based on Oxide Semiconductors

〇I-Chun Cheng¹、Shu-Ming Hsu¹、Dung-Yue Su¹、Feng-Yu Tsai¹、Jian-Zhang Chen¹ (1.National Taiwan Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:00 〜 14:30 |PDF ダウンロード

[J-5-02] Operando Hard X-ray Photoelectron Spectroscopy Study of Buried Interface Chemistry of Au/In₂O₃/Al₂O₃/p⁺-Si Stacks under Applied Bias

〇Ibrahima Gueye¹、Riku Kobayashi^1,2、Shigenori Ueda¹、Toshihide Nabatame³、Kazuhito Tsukagoshi³、Atsushi Ogura^2,4、Takahiro Nagata^1,2,3 (1.National Institute for Materials Science (NIMS), Research Center for Functional Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044、2.Graduate School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571、3.International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044、4.Meiji Renewable Energy Laboratory, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:30 〜 14:37 |PDF ダウンロード

[J-5-03] High-Resolution Tomographic Analysis on AlN films Grown on NPSSs Using Nanobeam X-Ray Diffraction

〇Yusuke Hayashi¹、Nozomi Yamamoto¹、Yudai Nakanishi¹、Takeaki Hamachi¹、Tetsuya Tohei¹、Kazushi Sumitani²、Yasuhiko Imai²、Shigeru Kimura²、Kanako Shojiki³、Hideto Miyake³、Akira Sakai¹ (1.Osaka Univ.、2.JASRI、3.Mie Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:37 〜 14:44 |PDF ダウンロード

[J-5-04] Study on Negative-Bias Photodegradation Mechanism in IGZO FET with First -Principles Calculation

〇Tomonori Nakayama¹、Masahiro Takahashi¹、Hitoshi Kunitake¹、Kuo-Chang Huang²、Hiroshi Yoshida²、Miller Liao³、Shou-Zen Chang²、Shunpei Yamazaki¹ (1.Semiconductor Energy Laboratory Corp., Ltd、2.Powerchip Semiconductor Manufacturing Corp.、3.National Taiwan Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:44 〜 14:51 |PDF ダウンロード

[J-5-05] [No-Show]Photoconductive laser spectroscopy as a method for direct observation of negative bias illumination stress (NBIS) induced modulation of defects in zinc-tin-oxide TFT

〇Soumen Dhara¹、Stephen A Lynch² (1.Sri Sri Univ.、2.Univ. of Cardiff)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:51 〜 14:58

[J-5-06] Stability of Crystalline IGZO Owing to Minute Crystal Region

〇Tomonori Nakayama¹、Masahiro Takahashi¹、Hitoshi Kunitake¹、Shunpei Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:58 〜 15:05 |PDF ダウンロード