[D-3-01 (Invited)] Progress in CMOS Integration in Wide-bandgap Electronics

〇Samuel James Bader^1,2、Reet Chaudhuri¹、Kazuki Nomoto¹、Han Wui Then²、Huili Grace Xing¹、Debdeep Jena¹ (1.Cornell Univ.、2.Intel Corp.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 09:00 〜 09:30 |PDF ダウンロード

[D-3-02] Steep Sub-threshold Swing of Sub-60 mV/dec Using AlN/GaN/InGaN Coupling Channel HEMTs

〇Hao Lu¹、Bin Hou¹、Ling Yang¹、Xuerui Niu¹、Zeyan Si¹、Meng Zhang¹、Mei Wu¹、Xiaohua Ma¹、Yue Hao¹ (1.Xidian University)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 09:30 〜 09:37 |PDF ダウンロード

[D-3-03] High Breakdown Voltage (-580 V) in (001) Vertical-Type 2DHG Diamond MOSFET by p^--drift layer

〇Kosuke Ota¹、Jun Tsunoda¹、Naoya Niikura¹、Aoi Morishita¹、Atsushi Hiraiwa¹、Hiroshi Kawarada^1,2 (1.Waseda Univ.、2.The Kagami Memorial Lab. for Materials Sci. and Tech.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 09:37 〜 09:44 |PDF ダウンロード

[D-3-04] C-Si Interface on (111) Diamond MOSFET with Excellent N ormally-off Operation

〇Xiao Hua ZHU^1,3、Te Bi¹、Yu Fu¹、Yu Hao Chang¹、Jin Long Liu³、Cheng Ming Li³、Hiroshi Kawarada^1,2 (1.Waseda Univ.、2.The Kagami Memorial Lab. for Materials Sci. and Tech.、3.Univ. of Sci. & Tech. Beijing)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 09:44 〜 09:51 |PDF ダウンロード

[D-3-05] Lowest contact resistance for high drain current density >1A/mm at Diamond MOSFETs with heavily boron-doped source and drain

〇Fuga Asai¹、Ken Kudara¹、Masakazu Arai¹、Yukiko Suzuki¹、Atsushi Hiraiwa¹、Hiroshi Kawarada^1,2 (1.School of Fundamental Science & Engineering Waseda Univ.、2.Kagami Memorial Research Institute for Materials Science and Technology, Waseda Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 09:51 〜 09:58 |PDF ダウンロード

[D-3-06] Optical Detected Magnetic Resonance of Nitrogen-Vacancy Centers in Vertical Diamond Schottky Diode

〇Muhammad Hafiz bin Abu Bakar¹、Aboulaye Traore¹、Junjie Guo¹、Toshiharu Makino²、Masahiko Ogura²、Satoshi Yamasaki²、Takeaki Sakurai¹ (1.Univ. of Tsukuba、2.National Institute of Advance Industrial Science and Technology)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 09:58 〜 10:05 |PDF ダウンロード

[D-4-01 (Invited)] Reduction of Interface State Density in the SiC MOS Structures by a Non-oxidation Process

〇Tsunenobu Kimoto¹、Keita Tachiki¹、Takuma Kobayashi^1,2、Yuichiro Matsushita² (1.Kyoto Univ.、2.Tokyo Inst. Tech.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 10:45 〜 11:15 |PDF ダウンロード

[D-4-02] Positive threshold voltage shift of 4H-SiC MOSFET induced by Al₂O₃/SiO₂ interface dipole layer formation

〇Tae-Hyeon Kil¹、Munetaka Noguchi²、Hiroshi Watanabe²、Koji Kita¹ (1.The Univ. of Tokyo、2.Mitsubishi Electric Corp.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:15 〜 11:22 |PDF ダウンロード

[D-4-03] Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO₂/4H-SiC(11-20) Interfaces

〇Takato Nakanuma¹、Yuu Iwakata¹、Takuji Hosoi¹、Takuma Kobayashi¹、Mitsuru Sometani²、Mitsuo Okamoto²、Takayoshi Shimura¹、Heiji Watanabe¹ (1.Osaka Univ.、2.AIST)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:22 〜 11:29 |PDF ダウンロード

[D-4-04] "Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface"

〇Eiji Kagoshima¹、Wakana Takeuchi²、Katsuhiro Kutsuki³、Mitsuo Sakashita⁴、Hirokazu Fujiwara¹、Osamu Nakatsuka^4,5 (1.MIRISE Technologies Corp.、2.Aichi Institute of Tech.、3.TOYOTA CENTRAL R&D LABS., Inc.、4.Graduate School of Eng., Nagoya Univ.、5.Inst. of Materials and Systems for Sustainability, Nagoya Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:29 〜 11:36 |PDF ダウンロード