Session information

Tu-1: GaN-1

GaN

Tu-1: GaN-1

Tue. Aug 30, 2022 3:00 PM - 4:15 PM DRIP ONLINE CONFERENCE

Chair:Anna Mogilatenko, Yongzhao Yao

△：Presentation by Applicant for the DRIP "Young Researcher Award"

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3:00 PM - 3:30 PM

[Tu1-1/Inv] Surface and oxide interface characterization of n and p-GaN for power electronics

*Yasuo Koide¹, Toshihide Nabatame¹, Yoshihiro Irokawa¹, Kazutaka Mitsuishi¹ (1. National Institute for Materials Science (NIMS))

3:30 PM - 3:45 PM

△ [Tu1-2] Structural Analysis of Defects in Oxide Vapor Phase Epitaxy Grown GaN

*ZHENDONG WU¹, Yudai Nakanishi¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Akira Sakai¹, Junichi Takino², Kazushi Sumitani³, Yasuhiko Imai³, Shigeru Kimura³ (1. Osaka University, 2. Panasonic Corporation, 3. Japan Synchrotron Radiation Research Institute)

3:45 PM - 4:00 PM

△ [Tu1-3] Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN

*Shan Wu¹, Xue Lin Yang¹, Wei Kun Ge¹, Bo Shen¹ (1. Peking University)

4:00 PM - 4:15 PM

[Tu1-4] Linear relationship between dislocation pattern size induced by Vickers indentation and imprint width on (0001) GaN

*Yukari Ishikawa¹, Yoshihiro Sugawara¹, Yongzhao Yao¹, Syusui Ogawa¹, Daisaku yokoe¹, Hidetoshi Takeda², Hieo Aida², Kazuyuki Tadatomo³ (1. Japan Fine Ceramics Center, 2. Nagaoka University of Technology, 3. Yamaguchi University)