19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors

Young Researcher Award

 
 

   

A brief introduction of the presentation  
Theoretical consideration and experimental demonstration revealed that contrast variation of birefringence image in an off-axis SiC wafer corresponds to the in-plane shear stress field, which enables us to identify the edge-component Burgers vector of threading dislocations in SiC wafers.

Message from the YRA winner
I am very honored to join DRIP XIX conference and receive the Young Researcher Award.
Everything in the conference including discussion with the participants and listening to the presentation is a totally happy time.
I greatly appreciate the collaborators in my research, and the participants and the committee members of DRIP XIX.

 

   
 
A brief introduction of the presentation  
Two-photon-absorption-induced currents in 4H-SiC devices were investigated, towards not only visualization of extended defects but also characterization of carrier trapping / recombination processes via the extended defects, i.e., recombination coefficient at single Shockley stacking fault.

Message from the YRA winner
It’s a great honor to receive the award in the traditional DRIP conference. I would like to express my gratitude for coauthors, all participants and committee members. I hope I can attend next DRIP conference and have further discussions in person.