19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors

Plenary / Invited Speakers

Plenary Speakers
  • Kazuhito Matsukawa, SUMCO
Silicon Wafer Technology evolving with Semiconductor Devices
  • Eiji Okunishi, JEOL Ltd.
Recent advances in transmission electron microscopy over the past decade
Invited Speakers
  • Michal Bockowski, UNIPRESS
Defects in Ammonothermal GaN crystals and substrates
  • Dmitri Golberg, Queensland University of Technology (QUT)
Analysis of nanomaterial properties using in situ transmission electron microscopy
  • Birgit Kallinger, Fraunhofer Institute for Integrated Systems and Device Technology IISB
Homoepitaxial growth and defect characterization of 4H-SiC
  • Yasuo Koide, NIMS​
Surface and oxide interface characterization of n and p-GaN for power electronics
  • Kentaro Kutsukake, RIKEN
Materials Informatics for the semiconductor crystal growth
  • Roger Loo, IMEC
Si and SiGe Epitaxial Growth in view of Nanosheet CMOS Devices and 3D Sequential Integration
  • Nadeemullah Mahadik, U.S. Naval Research Laboratory
Investigation of Defects in Thick 4H-SiC Epitaxial Layers for 10+kV Devices
  • Kerstin Volz, University Marburg​
Interfaces in semiconductors: disentangling composition and electric fields by electron microscopy
  • Yongzhao Yao, Japan Fine Ceramics Center (JFCC)
Structural defects in β-Ga2O3 analyzed by X-ray topography and complementary techniques