Plenary / Invited Speakers
Plenary Speakers
- Kazuhito Matsukawa, SUMCO
Silicon Wafer Technology evolving with Semiconductor Devices
- Eiji Okunishi, JEOL Ltd.
Recent advances in transmission electron microscopy over the past decade
Invited Speakers
- Michal Bockowski, UNIPRESS
Defects in Ammonothermal GaN crystals and substrates
- Dmitri Golberg, Queensland University of Technology (QUT)
Analysis of nanomaterial properties using in situ transmission electron microscopy
- Birgit Kallinger, Fraunhofer Institute for Integrated Systems and Device Technology IISB
Homoepitaxial growth and defect characterization of 4H-SiC
- Yasuo Koide, NIMS
Surface and oxide interface characterization of n and p-GaN for power electronics
- Kentaro Kutsukake, RIKEN
Materials Informatics for the semiconductor crystal growth
- Roger Loo, IMEC
Si and SiGe Epitaxial Growth in view of Nanosheet CMOS Devices and 3D Sequential Integration
- Nadeemullah Mahadik, U.S. Naval Research Laboratory
Investigation of Defects in Thick 4H-SiC Epitaxial Layers for 10+kV Devices
- Kerstin Volz, University Marburg
Interfaces in semiconductors: disentangling composition and electric fields by electron microscopy
- Yongzhao Yao, Japan Fine Ceramics Center (JFCC)
Structural defects in β-Ga2O3 analyzed by X-ray topography and complementary techniques