Tu-2: GaN-2 & WBG

[Tu2-4] Deterioration of AlN layer quality during growth on high-temperature annealed AlN: dislocation half-loop formation and its suppression

*Anna Mogilatenko¹, Sylvia Hagedorn¹, Carsten Netzel¹, Sebastian Walde¹, Markus Weyers¹, Chia-Yen Huang² (1. Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH), 2. Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University)