Tu-P: Poster-1

△ [TuP-18] Effect of Si vacancies on the thermal diffusion of Aluminum implanted in 4H-SiC

*Jumpei Shirai¹, Masayuki Yamamoto^1,2, Koji Nakayama¹, Hitoshi Umezawa¹, Yasunori Tanaka¹ (1. National Institute of Advanced Industrial Science and Technology, 2. Dept. of Electrical and Electronic Engineering, University of Yamanashi)