We-P: Poster-2

△ [WeP-06] Enhancement of Sn induced lateral crystallization of amorphous Ge by using Sn diffusion control

*Kaisei Wakishima¹, Kenji Yoshino², Kenichiro Takakura¹, Isao Tsunoda¹ (1. National Institute of Technology, Kumamoto College, 2. Department of Applied physics and Electronic Engineering, University of Miyazaki)