We-P: Poster-2

[WeP-22] Defect characterization and evolution in heavily doped n-type GaAs and Ge modified by sub-second intense light pulses

*Slawomir Prucnal¹, Juanmei Juanmei Duan¹, Shengqiang Zhou¹, Maciej Oskar Liedke², Maik Butterling², Eric Hirschmann², Andreas Wagner², Wojciech Dawidowski³ (1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany, 2. Institute of Radiation Physics Helmholtz-Zentrum Dresden - Rossendorf, Bautzner Landstrasse 400, D-01328 Dresden, Germany , 3. Wrocław University of Science and Technology, Faculty of Electronics, Photonics and Microsystems, Janiszewskiego 11/17, 50-372 Wrocław, Poland)