Session information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[17a-B5-1~10] 13.3 Insulator technology

Tue. Sep 17, 2013 9:15 AM - 12:00 PM B5 (TC2 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

△ [17a-B5-1] Theoretical Analysis of SiO₂ Etching Processes by Fluorocarbon Radicals Based on Quantum Chemical Molecular Dynamics Method

^○(D)Hiroshi Ito¹, Takuya Kuwahara¹, Yuji Higuchi¹, Nobuki Ozawa¹, Seiji Samukawa², Momoji Kubo¹ (Graduate School of Engineering, Tohoku Univ.¹, Inst. of Fluid Science, Tohoku Univ.²)

9:30 AM - 9:45 AM

[17a-B5-2] Low-Temperature Fabrication of gate oxide using a SOG solution

^○Ryo Usuda¹, Shinji Nozaki¹, Kazuo Uchida¹ (UEC Tokyo¹)

9:45 AM - 10:00 AM

△ [17a-B5-3] Forming SiO₂ thin Film by CO₂ laser Annealing of Spin-On Glass on Polycrystalline Silicon Thin Film

^○Daisuke Hishitani¹, Masahiro Horita^1,2, Yasuaki Ishikawa^1,2, Yosuke Watanabe³, Hiroshi Ikenoue³, Yukiharu Uraoka^1,2 (NAIST¹, CREST², Kyushu univ.³)

10:00 AM - 10:15 AM

▲ [17a-B5-4] Silicon Surface oxidation and Passivation by Remote Induction-Coupled Oxygen Plasma

Toshiyuki Sameshima¹, Masahiko Hasumi¹, Shinya Yoshidomi¹, Tomohiko Nakamura¹, ^○(B)Satoshi Shigeno¹ (TUAT¹)

10:15 AM - 10:30 AM

[17a-B5-5] Dependence of Oxide Hole Trap Density on Si Surface Orientation

^○(M2)Keisuke Umeda^1,3, Keitaro Okada^2,3, Daisuke Kobayashi³, Hiroshi Nohira¹, Kazuyuki Hirose³ (Tokyo City Univ.¹, Waseda Univ.², ISAS/JAXA³)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

▲ [17a-B5-6] Evaluation of Interface State Density of Strained-Si MOS Interfaces by Conductance Method

^○Weili Cai¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (The University of Tokyo¹)

11:00 AM - 11:15 AM

△ [17a-B5-7] MONOS-specific interface-state generation/recovery mechanisms related to above stacked SiN layer

^○Shosuke Fujii¹, Kiwamu Sakuma¹ (Toshiba¹)

11:15 AM - 11:30 AM

[17a-B5-8] Estimation method of breakdown electric-field strength by using a molecular orbital calculation technique

^○Shuichiro Wakao^1,3, Hiroshi Seki^2.3, Daisuke Kobayashi³, Tomoyuki Yamamoto¹, Kenji Yasuoka², Kazuyuki Hirose³ (Waseda Univ.¹, Keio Univ.², ISAS/JAXA³)

11:30 AM - 11:45 AM

[17a-B5-9] Impact of InAs insertion layer on Al₂O₃/GaSb MOS interface properties

^○(PC)Masafumi Yokoyama¹, Haruki Yokoyama², Mitsuru Takenaka¹, Shinichi Takagi¹ (The Univ. of Tokyo¹, NTT Photonics Lab. NTT Corp.²)

11:45 AM - 12:00 PM

△ [17a-B5-10] Demonstration of metal S/D schottky-barrier GaSb pMOSFETs

^○(M1)Takahiro Gotow^1,2, Sachie Fujikawa¹, Hiroki I. Fujishiro¹, Mutuso Ogura², Tetsuji Yasuda², Tatsuro Maeda^1,2 (Tokyo University of Science¹, AIST²)

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