Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-D7-1~17] 14.3 Electron devices and Process technology

Thu. Sep 19, 2013 1:00 PM - 5:45 PM D7 (MK 3F-302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:30 PM

[19p-D7-1] [JSAP Paper Award Speech](30 min.)Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2A/mm

^○Xiuju Zhou¹, Qiang Li¹, Chak Wah Tang¹, Kei May Lau¹ (HKUST¹)

1:30 PM - 1:45 PM

[19p-D7-2] Frequency Limits of Nanoscale HEMTs with Various Channel Materials

^○Shohei Nagai¹, Yutaro Nagai¹, Sachie Fujikawa¹, Shinsuke Hara², Akira Endoh², Issei Watanabe², Akifumi Kasamatsu², Hiroki Fujishiro¹ (Tokyo University of Science¹, National Institute of Information and Communications Technology²)

1:45 PM - 2:00 PM

[19p-D7-3] Comparative Study on III-V DG MOSFETs with Various Channel Materials

^○Ryoko Ohama¹, Akio Nisida¹, Sachie Fujikawa¹, Hiroki Fujishiro¹ (Tokyo University of Science¹)

2:00 PM - 2:15 PM

△ [19p-D7-4] Channel thickness dependence on III–V–OI InGaAs MOSFET with n-InP source for high current density

^○Kazuto Ohsawa¹, Atsushi Kato¹, Takeru Sagai¹, Toru Kanazawa¹, Eiji Uehara¹, Yasuyuki Miyamoto¹ (Tokyo Tech¹)

2:15 PM - 2:30 PM

[19p-D7-5] Over 500-GHz f_t InP/InGaAs HBT technology using a SiN/SiO₂ sidewall process

^○Norihide Kashio¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹ (NTT Corp.¹)

2:30 PM - 2:45 PM

△ [19p-D7-6] Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope

^○Masashi Kashiwano¹, Atsushi Yukimachi¹, Yasuyuki Miyamoto¹ (Tokyo Tech¹)

2:45 PM - 3:00 PM

△ [19p-D7-7] Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InSb HEMTs taking into account the non-parabolicity of the conduction band

^○(D)Yui Nishio¹, Takahiro Tange¹, Satou Takato¹, Naomi Hirayama¹, Tsutomu Iida¹, Yoshifumi Takanashi¹ (TUS¹)

3:00 PM - 3:15 PM

△ [19p-D7-8] Effect of underlying metal on gold plating line fabricated on GaN

^○Kazuhiro Maeda¹, Koichiro Nishizawa¹, Toshihiko Shiga¹, Masayoshi Takemi¹ (Mitsubishi Electric Corp.¹)

3:15 PM - 3:30 PM

△ [19p-D7-9] Ohmic Contact Formation on β-Ga₂O₃ Using Si Ion Implantation

^○Kohei Sasaki^1,2, Masataka Higashiwaki², Akito Kuramata¹, Takekazu Masui³, Shigenobu Yamakoshi¹ (Tamura Corp.¹, NICT², Koha Co., Ltd.³)

Break (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

[19p-D7-10] Depletion-mode Ga₂O₃ MOSFET

^○Masataka Higashiwaki¹, Kohei Sasaki^2,1, Takafumi Kamimura¹, Man Hoi Wong¹, Krishnamurthy Daivasigamani¹, Akito Kuramata², Takekazu Masui³, Shigenobu Yamakoshi² (NICT¹, Tamura Corp.², Koha Co., Ltd.³)

4:00 PM - 4:15 PM

[19p-D7-11] Al2O3/ n-Ga2O3 MOS diode (2)

^○Takafumi Kamimura¹, Man Hoi Wong¹, Kohei Sasaki^2,1, Krishnamuruthy Daivasigamani¹, Akito Kuramata², Takekazu Masui³, Shigenobu Yamakoshi², Masataka Higashiwaki¹ (NICT¹, Tamura Corp.², Koha Co., Ltd.³)

4:15 PM - 4:30 PM

[19p-D7-12] Transcription of pattern on GaAs(001) substrate using porous aluminum mask

^○(M1)Takenori Yamazaki¹, Yoshitaka Morishita¹ (Tokyo Univ. of Agri. & Tech¹)

4:30 PM - 4:45 PM

[19p-D7-13] Electrochemical formation of GaN porous nano structures using backside-light irradiation

^○Akio Watanabe¹, Yusuke Kumazaki¹, Zenji Yatabe¹, Taketomo Sato¹ (RCIQE. Hokkaido Univ.¹)

4:45 PM - 5:00 PM

[19p-D7-14] Mechanical transfer of AlGaN/GaN HEMTs to a copper plate using layered BN as a release layer

^○Masanobu Hiroki¹, Kazuhide Kumakura¹, Yasuyuki Kobayashi¹, Tetsuya Akasaka¹, Hideki Yamamoto¹, Toshiki Makimoto¹ (NTT Basic Research Lab.¹)

5:00 PM - 5:15 PM

[19p-D7-15] Application of super-higher-order nonlinear dielectric microscopy for power-device analysis: Cross-sectional imaging of SiC-MOSFET

^○Norimichi Chinone¹, Takashi Nakamura², Yasuo Cho¹ (RIEC, Tohoku Univ.¹, ROHM Co., Ltd.²)

5:15 PM - 5:30 PM

[19p-D7-16] Analytical Study on a Common Gate Triple Dot Single Electron Turnstile with Asymmetric Gate Capacitances

^○Atsushi Nakajima¹, Shigeru Imai¹ (Ritsumeikan Univ.¹)

5:30 PM - 5:45 PM

[19p-D7-17] Evaluation and fabrication of metallo-dielectric semiconductor pillar nanocavities

^○Ryo Takemoto¹, Nagisa Ishihara¹, Hiroyuki Kurosawa¹, Ikuo Suemune¹ (RIES Hokkaido Univ.¹)