Poster presentation

[16p-P3-1~7] 10.1 Creation of new materials

Mon. Sep 16, 2013 1:30 PM - 3:30 PM P3 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[16p-P3-1] Evaluation of magnetic properties of amorphous alpha-Fe2O3- Co2O3 thin films

^○(P)Kentaro Kaneko¹, Sachio Komori², Itsuhiro Kakeya², Shizuo Fujita³, Katsuhisa Tanaka¹ (Department of Material Chemistry, Kyoto University¹, Department of Electronic Science and Engineering, Kyoto University², Photonics and Electronics Science and Engineering Center, Kyoto University³)

1:30 PM - 3:30 PM

[16p-P3-2] Room-temperature ferromagnetism in electride C12A7

^○Sho Nakamura¹, Naohiko Nakamura¹, Kotoro Tsubaki¹, Noboru Wada¹ (Toyo Univ.¹)

1:30 PM - 3:30 PM

▲ [16p-P3-3] L10-MnGa/Co Bilayer Films with Anti-ferromagnetic Exchange Coupling

^○(D)Reza Ranjbardizaj^{1, 2}, Atsushi Sugihara¹, Shigemi Mizukami¹, QinLi Ma¹, Satoshi Iihama², Yasuo Ando², Terunobu Miyazaki¹ (WPI-AIMR, Tohoku Univ.¹, Grad. School of Eng., Tohoku Univ.²)

1:30 PM - 3:30 PM

[16p-P3-4] Fabrication of perpendicularly magnetized FePd/Co₂MnSi epitaxial films for an electrode of magnetic tunnel junctions

^○(M2)Tomonari Kamada¹, Yuya Sakuraba¹, Yoshiaki Sonobe², Shigeki Takahashi², koki Takanashi¹ (IMR, Tohoku Univ.¹, Samsung Yokohama Research Inst.²)

1:30 PM - 3:30 PM

[16p-P3-5] Fabrication and characterization of quarter unit cell controlled spinel oxides (001) superlattice structure

^○(M2)Taku Murakami¹, Tomohiko Niizeki¹, Hideto Yanagihara¹, Yuichi Yamasaki², Hironori Nakao², Eiji Kita¹ (Tsukuba Univ.¹, KEK-PF/CMRC²)

1:30 PM - 3:30 PM

[16p-P3-6] Fabrication and characterization of perpendicularly magnetized film on semiconductors(3)

^○(M2)Takahiro Hiraki¹, Tomotsugu Ishikura¹, Keita Konishi¹, Zhixin Cui¹, Kanji Yoh¹ (Hokkaido Univ. RCIQE¹)

1:30 PM - 3:30 PM

[16p-P3-7] Characterization of Co_xFe_3-xO₄ (001) Thin Films Grown by Reactive Co-sputtering

^○(M1)Ryouhei Aoyama¹, Yuuji Utsumi¹, Tomohiko Niizeki¹, Hideto Yanagihara¹, Ko Mibu², Eiji Kita¹ (Tsukuba Univ.¹, Nitech²)

Oral presentation

[17a-C15-1~7] 10.1 Creation of new materials

Tue. Sep 17, 2013 10:00 AM - 11:45 AM C15 (TC3 2F-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

[17a-C15-1] Ferromagnetic one-dimensional lattice defects in antiferromagnetic NiO thin film.

^○(D)Issei Sugiyama¹, Naoya Shibata¹, Takahisa Yamamoto^1,2,3, Yuichi Ikuhara^1,2,4 (Univ. Tokyo¹, JFCC², Nagoya Univ.³, Tohoku Univ.⁴)

10:15 AM - 10:30 AM

[17a-C15-2] Crystal Growth and Physical Properties of Co₃Sn₂S₂ as a Candidate Half-metal

^○Shimpei Tanaka¹, Rikizo Yano¹, Manabu Kanou¹, Takao Sasagawa¹ (MSL-Tokyo Institute of Technology¹)

10:30 AM - 10:45 AM

[17a-C15-3] Local electronic states of Fe₄N thin films revealed from XMCD spectral shapes

^○Keita Ito¹, Tatsunori Sanai¹, Yoko Yasutomi¹, Kaoru Toko¹, Yukiharu Takeda², Yuji Saitoh², Tamio Oguchi³, Akio Kimura⁴, Takashi Suemasu¹ (Univ. of Tsukuba¹, JAEA², Osaka Univ.³, Hiroshima Univ.⁴)

10:45 AM - 11:00 AM

[17a-C15-4] Perpendicular magnetic anisotropy in Mn₄N films grown by molecular beam epitaxy

^○Yoko Yasutomi¹, Tatsunori Sanai¹, Keita Ito¹, Kaoru Toko¹, Takashi Suemasu¹ (Univ. of Tsukuba¹)

11:00 AM - 11:15 AM

[17a-C15-5] Magnetic anisotropy in CoxFe4-xN epitaxial thin films grown by MBE

^○Tatsunori Sanai¹, Keita Ito¹, Yoko Yasutomi¹, Kaoru Toko¹, Takashi Suemasu¹ (Inst. of Appl. Phys., Univ. of Tsukuba¹)

11:15 AM - 11:30 AM

[17a-C15-6] Electrical and magnetical properties of anti-perovskite nitride MnC₃GaN thin films

^○Hideki Sakakibara¹, Takeru Kobayashi¹, Tetsuya Miyawaki¹, Kenji Ueda¹, Hidefumi Asano¹ (Nagoya Univ.¹)

11:30 AM - 11:45 AM

▲ [17a-C15-7] Ferromagnetic nano-particles formed by annealing in group-IV ferromagnetic-semiconductor GeFe

^○Yuki Wakabayashi¹, Yoshisuke Ban¹, Shinobu Ohya¹, Masaaki Tanaka¹ (The Univ. of Tokyo¹)

Oral presentation

[18a-C15-1~10] 10.1 Creation of new materials

Wed. Sep 18, 2013 9:00 AM - 11:45 AM C15 (TC3 2F-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [18a-C15-1] Electric-field modulation of perpendicular magnetic anisotropy at MgO/Co₂FeAl interface

^○(PC)Masahito Tsujikawa¹, Daiki Mori², Yoshio Miura^2,1, Masafumi Shirai^2,1 (CSIS, Tohoku Univ.¹, RIEC, Tohoku Univ.²)

9:15 AM - 9:30 AM

[18a-C15-2] A first-principles study on the electronic structure of Mn_3-δX_δGa(X=Fe, Co, Ni)

^○Satoru Tanibayashi¹, Yoshio Miura², Masafumi Shirai² (Ichinoseki Nat. Coll. Tech.¹, RIEC Tohoku Univ.²)

9:30 AM - 9:45 AM

▼ [18a-C15-3] Magnetoresistance effect of perpendicularly magnetized tunnel junctions using Heusler type Mn-Co-Ga electrode

^○Takahide Kubota¹, Shigemi Mizukami¹, Hiroshi Naganuma², Mikihiko Oogane², Yasuo Ando², Terunobu Miyazaki¹ (WPI-AIMR, Tohoku Univ.¹, Grad. Sch. Eng., Tohoku Univ.²)

9:45 AM - 10:00 AM

▼ [18a-C15-4] Giant tunneling magnetoresistance in fully epitaxial Co₂(Mn,Fe)Si/MgO/Co₂(Mn,Fe)Si magnetic tunnel junctions

^○Takeshi Kawami¹, Hongxi Liu¹, Yusuke Honda¹, Tetsuya Uemura¹, Fengyuan Shi², Paul Voyles², Masafumi Yamamoto¹ (Hokkaido Univ.¹, Univ. of Wisconsin-Madison²)

10:00 AM - 10:15 AM

△ [18a-C15-5] Preparation and characterization of [Co₂MnSi /Pd]_n superlattice with perpendicular magnetization anisotropy

^○Yorinobu Fujino¹, Yuki Kubota¹, Naoki Matsushita¹, Yota Takamura¹, Yoshiaki Sonobe², Shigeki Nakagawa¹ (Dept. of Phys. Electron., Tokyo Tech¹, Samsung Yokohama Research Inst²)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

▲ [18a-C15-6] Influence of ultrathin Pt spacer layer at Co/Cr2O3 interface on perpendicular exchange bias in Pt/Co/Pt/Cr2O3 thin film

^○Yu Shiratsuchi¹, Kentaro Toyoki¹, Yuichiro Takechi¹, Satoshi Onoue¹, Yuuta Nakano¹, Ryoichi Nakatani¹ (Osaka University¹)

10:45 AM - 11:00 AM

[18a-C15-7] Preparation of perpendicularly-magnetized Mn-Ge thin films on Cr buffer layers

^○Atsushi Sugihara¹, Shigemi Mizukami¹, Terunobu Miyazaki¹ (WPI-AIMR, Tohoku Univ.¹)

11:00 AM - 11:15 AM

▲ [18a-C15-8] A first-principles study on magneto-crystalline anisotropy of FeNi multilayers

Sho Ozaki¹, ^○Yoshio Miura^1,2, Masahito Tsujikawa², Kazutaka Abe^1,2, Masafumi Shirai^1,2 (RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.²)

11:15 AM - 11:30 AM

▲ [18a-C15-9] Magnetic properties of L10-FePd / MgO films on GaAs and InP substrates

^○Makoto Kohda¹, Souta Iimori¹, Rento Ohusugi¹, Hiroshi Naganuma¹, Takamichi Miyazaki¹, Yasuo Ando¹, Junsaku Nitta¹ (Tohoku Univ.¹)

11:30 AM - 11:45 AM

▲ [18a-C15-10] Crystal structure and magnetism of ternary transition-metal chalcogenide CrFeTe thin films grown by MBE

^○Kazuma Yamawaki¹, Naoya Sekita¹, Ken Kanazawa¹, Shinji Kuroda¹ (Tsukuba Univ.¹)

Sessions

10. Spintronics and Magnetics » 10.1 Creation of new materials

[16p-P3-1~7] 10.1 Creation of new materials

[16p-P3-1] Evaluation of magnetic properties of amorphous alpha-Fe2O3- Co2O3 thin films

[16p-P3-2] Room-temperature ferromagnetism in electride C12A7

▲ [16p-P3-3] L10-MnGa/Co Bilayer Films with Anti-ferromagnetic Exchange Coupling

[16p-P3-4] Fabrication of perpendicularly magnetized FePd/Co₂MnSi epitaxial films for an electrode of magnetic tunnel junctions

[16p-P3-5] Fabrication and characterization of quarter unit cell controlled spinel oxides (001) superlattice structure

[16p-P3-6] Fabrication and characterization of perpendicularly magnetized film on semiconductors(3)

[16p-P3-7] Characterization of Co_xFe_3-xO₄ (001) Thin Films Grown by Reactive Co-sputtering

[17a-C15-1~7] 10.1 Creation of new materials

[17a-C15-1] Ferromagnetic one-dimensional lattice defects in antiferromagnetic NiO thin film.

[17a-C15-2] Crystal Growth and Physical Properties of Co₃Sn₂S₂ as a Candidate Half-metal

[17a-C15-3] Local electronic states of Fe₄N thin films revealed from XMCD spectral shapes

[17a-C15-4] Perpendicular magnetic anisotropy in Mn₄N films grown by molecular beam epitaxy

[17a-C15-5] Magnetic anisotropy in CoxFe4-xN epitaxial thin films grown by MBE

[17a-C15-6] Electrical and magnetical properties of anti-perovskite nitride MnC₃GaN thin films

▲ [17a-C15-7] Ferromagnetic nano-particles formed by annealing in group-IV ferromagnetic-semiconductor GeFe

[18a-C15-1~10] 10.1 Creation of new materials

▲ [18a-C15-1] Electric-field modulation of perpendicular magnetic anisotropy at MgO/Co₂FeAl interface

[18a-C15-2] A first-principles study on the electronic structure of Mn_3-δX_δGa(X=Fe, Co, Ni)

▼ [18a-C15-3] Magnetoresistance effect of perpendicularly magnetized tunnel junctions using Heusler type Mn-Co-Ga electrode

▼ [18a-C15-4] Giant tunneling magnetoresistance in fully epitaxial Co₂(Mn,Fe)Si/MgO/Co₂(Mn,Fe)Si magnetic tunnel junctions

△ [18a-C15-5] Preparation and characterization of [Co₂MnSi /Pd]_n superlattice with perpendicular magnetization anisotropy

▲ [18a-C15-6] Influence of ultrathin Pt spacer layer at Co/Cr2O3 interface on perpendicular exchange bias in Pt/Co/Pt/Cr2O3 thin film

[18a-C15-7] Preparation of perpendicularly-magnetized Mn-Ge thin films on Cr buffer layers

▲ [18a-C15-8] A first-principles study on magneto-crystalline anisotropy of FeNi multilayers

▲ [18a-C15-9] Magnetic properties of L10-FePd / MgO films on GaAs and InP substrates

▲ [18a-C15-10] Crystal structure and magnetism of ternary transition-metal chalcogenide CrFeTe thin films grown by MBE

Sessions

10. Spintronics and Magnetics » 10.1 Creation of new materials

[16p-P3-1~7] 10.1 Creation of new materials

▲ [16p-P3-3] L10-MnGa/Co Bilayer Films with Anti-ferromagnetic Exchange Coupling

[17a-C15-1~7] 10.1 Creation of new materials

▲ [17a-C15-7] Ferromagnetic nano-particles formed by annealing in group-IV ferromagnetic-semiconductor GeFe

[18a-C15-1~10] 10.1 Creation of new materials

▲ [18a-C15-1] Electric-field modulation of perpendicular magnetic anisotropy at MgO/Co2FeAl interface

▼ [18a-C15-3] Magnetoresistance effect of perpendicularly magnetized tunnel junctions using Heusler type Mn-Co-Ga electrode

▼ [18a-C15-4] Giant tunneling magnetoresistance in fully epitaxial Co2(Mn,Fe)Si/MgO/Co2(Mn,Fe)Si magnetic tunnel junctions

△ [18a-C15-5] Preparation and characterization of [Co2MnSi /Pd]n superlattice with perpendicular magnetization anisotropy

▲ [18a-C15-6] Influence of ultrathin Pt spacer layer at Co/Cr2O3 interface on perpendicular exchange bias in Pt/Co/Pt/Cr2O3 thin film

▲ [18a-C15-8] A first-principles study on magneto-crystalline anisotropy of FeNi multilayers

▲ [18a-C15-9] Magnetic properties of L10-FePd / MgO films on GaAs and InP substrates

▲ [18a-C15-10] Crystal structure and magnetism of ternary transition-metal chalcogenide CrFeTe thin films grown by MBE

▲ [18a-C15-1] Electric-field modulation of perpendicular magnetic anisotropy at MgO/Co₂FeAl interface

▼ [18a-C15-4] Giant tunneling magnetoresistance in fully epitaxial Co₂(Mn,Fe)Si/MgO/Co₂(Mn,Fe)Si magnetic tunnel junctions

△ [18a-C15-5] Preparation and characterization of [Co₂MnSi /Pd]_n superlattice with perpendicular magnetization anisotropy