Oral presentation

[17a-C2-1~10] 8.4 Plasma etching

Tue. Sep 17, 2013 9:15 AM - 11:45 AM C2 (TC3 1F-102)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

△ [17a-C2-1] Analysis of SiN/SiO₂ selectivity in fluorocarbon (FC)/hydrofluorocarbon (HFC) plasma etching

^○(M2)Keita Miyake¹, Michiro Isobe¹, Masanaga Fukasawa², Kazunori Nagahata², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (Osaka Univ.¹, Sony corporation²)

9:30 AM - 9:45 AM

△ [17a-C2-2] Molecular Dynamics Simulation of Si Surface Oxidation Processes by Oxygen Gas cluster Ion Beams

^○Kohei Mizotani¹, Michiro Isobe¹, Satoshi Hamaguchi¹ (Osaka Univ.¹)

9:45 AM - 10:00 AM

△ [17a-C2-3] Analyses of etching reactions of TaN and TaOx in view of Ta mask profile control

^○Hu Li¹, Yu Muraki¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (Osaka Univ¹)

10:00 AM - 10:15 AM

△ [17a-C2-4] Surface reactions by Br+ ions incident at oblique angles and reaction product ions (SiBrx+) in HBr plasmas

^○(M2)Yu Muraki¹, Hu Li¹, Tomoko Ito¹, Kazuhiro Karahashi¹, Masaaki Matsukuma², Satoshi Hamaguchi¹ (Osaka Univ.¹, TEL Technology Center Tsukuba²)

10:15 AM - 10:30 AM

△ [17a-C2-5] Interface trap generation at SiO₂ structure by CH_xF_y plasma etching

^○Takushi Shigetoshi¹, Masanaga Fukasawa¹, Kazunori Nagahata¹, Tetsuya Tatsumi¹ (Sony Corp.¹)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[17a-C2-6] Quicker Stabilization of CD Drift after Maintenance

^○Kousa Hirota¹, Takeshi Omori¹, Nobuyuki Negishi¹ (Central Research Laboratory, Hitachi, Ltd.¹)

11:00 AM - 11:15 AM

▼ [17a-C2-7] An Inhibition Mechanism for Surface Roughening of Photoresist During Plasma Etching Process with Plasma Cure

^○Yan Zhang¹, Takuya Takeuchi¹, Hiroki Nagano¹, Kenji Ishikawa¹, Makoto Sekine¹, Keigo Takeda¹, Hiroki Kondo¹, Masaru Hori¹ (Nagoya Univ.¹)

11:15 AM - 11:30 AM

△ [17a-C2-8] Mechanism of Generating Active Species and Etch Reaction in CHxFy Plasma (III)

^○(D)Yusuke Kondo¹, Yudai Miyawaki¹, Keigo Takeda¹, Hiroki Kondo¹, Kenji Ishikawa¹, Toshio Hayashi¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

11:30 AM - 11:45 AM

[17a-C2-10] A study on evaluation of damage induced by plasma processes using XPS

^○kazuaki kurihara¹, masahiko yoshiki¹, yasushi nakasaki¹ (Toshiba corp.¹)

Oral presentation

[18a-C2-1~8] 8.4 Plasma etching

Wed. Sep 18, 2013 9:30 AM - 11:45 AM C2 (TC3 1F-102)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:30 AM - 9:45 AM

[18a-C2-1] Dissociation paths caused by electron collisions for fluoromethanes

^○Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya University¹)

9:45 AM - 10:00 AM

[18a-C2-2] Feature Profile Evolution for plasma etching using on-wafer monitoring system

^○Tomohiro Kubota¹, Michio Sato², Takuya Iwasaki³, Kohei Ono³, Seiji Samukawa^1,4 (IFS, Tohoku Univ.¹, Harada Corp.², Mizuho I&R Inst.³, WPI-AIMR, Tohoku Univ.⁴)

10:00 AM - 10:15 AM

[18a-C2-3] Total simulation of neutral beam etching processes

Naoki Watanabe¹, Shingo Ohtsuka¹, Takuya Iwasaki¹, Kohei Ono¹, Yasuroh Iriye¹, Shunsuke Mochizuki², ^○Tomohiro Kubota³, Seiji Samukawa^3,4 (Mizuho I&R Inst.¹, Numerical Systems², IFS, Tohoku Univ.³, WPI-AIMR, Tohoku Univ.⁴)

10:15 AM - 10:30 AM

▲ [18a-C2-4] Si chemical dry etching in NOx (x=1 or 2) / F2 gas mixture at an elevated temperature (II)

^○Satomi Tajima¹, Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

▲ [18a-C2-5] Real-time / In-situ Electron Spin Resonance Analysis of Chemical Reactions on Silicon-Nitride with CF₄ Gas Plasma

^○(PC)Yudai Miyawaki¹, Haoran Wang¹, Yusuke Kondo¹, Kenji Ishikawa¹, Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

11:00 AM - 11:15 AM

[18a-C2-6] Real-time / in-situ electron spin resonance analysis of plasma surface interactions (5)

^○(M2)Haoran Wang¹, Kenji Ishikawa¹, Hideo Horibe², Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹, Kanazawa Inst. Technol.²)

11:15 AM - 11:30 AM

[18a-C2-7] Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas: Effects of Etch By-Products Ion Incidence

^○(D)Nobuya Nakazaki¹, Yoshinori Takao¹, Koji Eriguchi¹, Kouichi Ono¹ (Kyoto Univ.¹)

11:30 AM - 11:45 AM

[18a-C2-8] Surface loss probabilities of H and N atoms in H2 and N2 mixture gases

^○Toshiya Suzuki¹, Keigo Takeda¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Hori Hori¹ (Nagoya Univ.¹)

Sessions

08. Plasma Electronics » 8.4 Plasma etching

[17a-C2-1~10] 8.4 Plasma etching

△ [17a-C2-1] Analysis of SiN/SiO₂ selectivity in fluorocarbon (FC)/hydrofluorocarbon (HFC) plasma etching

△ [17a-C2-2] Molecular Dynamics Simulation of Si Surface Oxidation Processes by Oxygen Gas cluster Ion Beams

△ [17a-C2-3] Analyses of etching reactions of TaN and TaOx in view of Ta mask profile control

△ [17a-C2-4] Surface reactions by Br+ ions incident at oblique angles and reaction product ions (SiBrx+) in HBr plasmas

△ [17a-C2-5] Interface trap generation at SiO₂ structure by CH_xF_y plasma etching

[17a-C2-6] Quicker Stabilization of CD Drift after Maintenance

▼ [17a-C2-7] An Inhibition Mechanism for Surface Roughening of Photoresist During Plasma Etching Process with Plasma Cure

△ [17a-C2-8] Mechanism of Generating Active Species and Etch Reaction in CHxFy Plasma (III)

[17a-C2-10] A study on evaluation of damage induced by plasma processes using XPS

[18a-C2-1~8] 8.4 Plasma etching

[18a-C2-1] Dissociation paths caused by electron collisions for fluoromethanes

[18a-C2-2] Feature Profile Evolution for plasma etching using on-wafer monitoring system

[18a-C2-3] Total simulation of neutral beam etching processes

▲ [18a-C2-4] Si chemical dry etching in NOx (x=1 or 2) / F2 gas mixture at an elevated temperature (II)

▲ [18a-C2-5] Real-time / In-situ Electron Spin Resonance Analysis of Chemical Reactions on Silicon-Nitride with CF₄ Gas Plasma

[18a-C2-6] Real-time / in-situ electron spin resonance analysis of plasma surface interactions (5)

[18a-C2-7] Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas: Effects of Etch By-Products Ion Incidence

[18a-C2-8] Surface loss probabilities of H and N atoms in H2 and N2 mixture gases

Sessions

08. Plasma Electronics » 8.4 Plasma etching

[17a-C2-1~10] 8.4 Plasma etching

△ [17a-C2-1] Analysis of SiN/SiO2 selectivity in fluorocarbon (FC)/hydrofluorocarbon (HFC) plasma etching

△ [17a-C2-2] Molecular Dynamics Simulation of Si Surface Oxidation Processes by Oxygen Gas cluster Ion Beams

△ [17a-C2-3] Analyses of etching reactions of TaN and TaOx in view of Ta mask profile control

△ [17a-C2-4] Surface reactions by Br+ ions incident at oblique angles and reaction product ions (SiBrx+) in HBr plasmas

△ [17a-C2-5] Interface trap generation at SiO2 structure by CHxFy plasma etching

▼ [17a-C2-7] An Inhibition Mechanism for Surface Roughening of Photoresist During Plasma Etching Process with Plasma Cure

△ [17a-C2-8] Mechanism of Generating Active Species and Etch Reaction in CHxFy Plasma (III)

[18a-C2-1~8] 8.4 Plasma etching

▲ [18a-C2-4] Si chemical dry etching in NOx (x=1 or 2) / F2 gas mixture at an elevated temperature (II)

▲ [18a-C2-5] Real-time / In-situ Electron Spin Resonance Analysis of Chemical Reactions on Silicon-Nitride with CF4 Gas Plasma

△ [17a-C2-1] Analysis of SiN/SiO₂ selectivity in fluorocarbon (FC)/hydrofluorocarbon (HFC) plasma etching

△ [17a-C2-5] Interface trap generation at SiO₂ structure by CH_xF_y plasma etching

▲ [18a-C2-5] Real-time / In-situ Electron Spin Resonance Analysis of Chemical Reactions on Silicon-Nitride with CF₄ Gas Plasma