Oral presentation

[16p-B1-1~11] 17.4 Device application

Mon. Sep 16, 2013 3:45 PM - 6:30 PM B1 (TC2 1F-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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3:45 PM - 4:00 PM

▲ [16p-B1-1] [Young Scientist Oral Presentation Award Speech](15 min.) Effect of Strain on Chemical Reactions on Flexible Graphene Substrates

^○Mark Bissett¹, Satoru Konabe², Susumu Okada², Masaharu Tsuji¹, Hiroki Ago¹ (Kyushu Univ.¹, Tsukuba Univ.²)

4:00 PM - 4:15 PM

[16p-B1-2] The change in characteristics of few-layer MoS2 FET by annealing in H2 atmosphere

^○masaya murase¹, yuusuke matsui¹, hiroshi tabata¹, osamu kubo¹, mitsuhiro katayama¹ (Osaka Univ.¹)

4:15 PM - 4:30 PM

△ [16p-B1-3] Transition Metal Dichalcogenides based Electric Double Layer Transistors

^○Kou Ho¹, Jing-Kai Huang², Ryo Shimizu¹, Kazuma Funahashi¹, Lain-Jong Li², Yoshihiro Iwasa³, Taishi Takenobu¹ (Waseda Univ.¹, Academia Sinica², Univ. of Tokyo³)

4:30 PM - 4:45 PM

△ [16p-B1-4] Fabrication of graphene devices using resist-free process

^○Masatoshi Nakamura¹, Zaifuddin Nursakinah¹, Yasuhide Ohno¹, Kenzou Maehashi¹, Koichi Inoue¹, Kazuhiko Matsumoto¹ (ISIR, Osaka Univ.¹)

4:45 PM - 5:00 PM

[16p-B1-5] Quantum transport simulation of gate electrostatic control in GNRFET

^○Masakatsu Ito¹, Shintaro Sato¹, Naoki Yokoyama¹, Christian Joachim² (AIST¹, CEMES-CNRS²)

5:00 PM - 5:15 PM

[16p-B1-6] Envirnment Effects of Planer FET Photodetector by Transferred CVD Graphene

^○Nobutatsu Koshobu¹, Yoshiyuki Doi¹, Takashi Yamada¹, Hiroyoshi Togoh² (NTT Photonics Laboratories¹, NTT Microsystem Integration Laboratories²)

5:15 PM - 5:30 PM

△ [16p-B1-7] Graphene Field-Effect Transistor-Based Influenza-Virus Sensing

^○(M1)Takeshi Oe¹, Yasuhide Ohno¹, Kenzo Maehashi¹, Kazuhiko Matsumoto¹, Yohei Watanabe², Kazuyoshi Ikuta², Toshio Kawahara³, Yasuo Suzuki³ (ISIR, Osaka Univ.¹, RIMD, Osaka Univ.², Chubu Univ.³)

5:30 PM - 5:45 PM

[16p-B1-8] Specific adsorption of proteins using graphene oxide thin film field effect transistor

^○Michihiro Matsuzaki¹, Ryota Negishi¹, Yasuhide Ono², Kenzou Maehashi², Kazuhiko Matsumoto², Yoshihiro Kobayashi¹ (Osaka Univ.¹, Osaka Inst.²)

5:45 PM - 6:00 PM

[16p-B1-9] Controlling Electronic Properties of Graphene Nanoribbon by Planar Molecules

^○Minoru Fukumori¹, Hirofumi Tanaka¹, Daisuke Tanaka¹, Takuji Ogawa¹ (Osaka Univ.¹)

6:00 PM - 6:15 PM

[16p-B1-10] Field Emission Characteristics in Graphene Flowers

^○Yusuke Iwai^1,3, Kazuo Muramatsu², Shougo Tsuboi¹, Atsuo Jyouzuka¹, Tomonori Nakamura¹, Yoshihiro Onizuka¹, Hidenori Mimura³ (Onizca Glass Co. Ltd.¹, Incubation Alliance Inc.², Shizuoka Univ.³)

6:15 PM - 6:30 PM

[16p-B1-11] Intercalation for interconnects of multi–layer graphene grown by CVD

^○Haruhisa Nakano¹, Ichiro Kubota¹, Boo Zhou¹, Daiyu Kondo¹, Kenjiro Hayashi¹, Makoto Takahashi¹, Motonobu Sato¹, Katsunori Yagi¹, Shu Nakaharai¹, Shintaro Sato¹, Naoki Yokoyama¹ (GNC,AIST¹)

Oral presentation

[17p-B2-1~14] 17.4 Device application

Tue. Sep 17, 2013 1:00 PM - 4:45 PM B2 (TC2 1F-102)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

[17p-B2-1] Improvement of resolution of flexographic printing technique for miniaturization of printed carbon nanotube thin-film transistors

^○Michihiko Maeda¹, Kentaro Higuchi¹, Yuta Nakajima², Takuya Tomura², Msafumi Takesue², Shigeru Kishimoto¹, Katsuhiko Hata², Yutaka Ohno¹ (Nagoya Univ.¹, Bando Chemical Industries, Ltd.²)

1:15 PM - 1:30 PM

△ [17p-B2-2] Large-scale integration of carbon nanotube transistors for an artificial electronic skin

^○Kuniharu Takei^1,2, Ali Javey² (Osaka Prefecture University¹, University of California, Berkeley²)

1:30 PM - 1:45 PM

△ [17p-B2-3] Reduction of the contact resistivity at CNT/SiC interface by heavy doping

^○Kazuma Suzuki¹, Masahumi Inaba¹, Megumi Shibuya¹, Miho Myodo¹, Atsushi Hiraiwa¹, Yoshiho Masuda², Wataru Norimatsu², Michiko Kusunoki², Hiroshi Kawarada¹ (Waseda Univ.¹, Nagoya Univ.²)

1:45 PM - 2:00 PM

△ [17p-B2-4] Fabrication of carbon-nanotube memory by using atomic-layer deposition

^○Kohei Seike¹, Yasuhide Ohno¹, Kenzo Maehashi¹, Koichi Inoue¹, Kazuhiko Matsumoto¹ (ISIR Osaka Univ.¹)

2:00 PM - 2:15 PM

△ [17p-B2-5] Control of Nonvolatile Operation on Carbon Nanotube Nanorelay by Resonant Vibration

^○(M2)Tatsuya Kagota¹, Atsuko Nagataki^1,2, Kuniharu Takei¹, Takayuki Arie¹, Seiji Akita¹ (Osaka Pref. Univ.¹, KRI Inc.²)

2:15 PM - 2:30 PM

[17p-B2-6] Temperature Coefficient of Resistance in High-Purity (6,5) Single-Wall Carbon Nanotube Networks

^○Hikaru Kudo¹, Seiya Kaji¹, Kazuhiro Yanagi¹ (Tokyo Metropolitan Univ¹)

2:30 PM - 2:45 PM

[17p-B2-7] Properties of a field emission lighting device employing high crystallized single-walled carbon nanotubes

^○Norihiro Shimoi¹, Toshimasa Hojo¹, Adriana Redezma Estrada¹, Sharon Marie Garrido¹, Yasumitsu Tanaka¹, Kazuyuki Tohji¹ (Tohoku Univ.¹)

Break （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

[17p-B2-8] Characterization of Single-Walled Carbon Nanotube Counter Electrodes for Dye-Sensitized Solar Cells

^○Takaaki Chiba¹, Hidenori Kinoshita¹, Kehang Cui¹, Erik Einarsson¹, Shohei Chiashi¹, Shigeo Maruyama¹ (Univ. of Tokyo¹)

3:15 PM - 3:30 PM

[17p-B2-9] Brain Wave Electrode using multi-wall carbon nanotube-dispersed Thin film Ⅰ

^○Akira Kawamoto¹, Naoki Fusisato¹, Kosuke Awara², Kohei Kitai² (FUKUI Nat. Col. Tech.¹, Fukui Univ²)

3:30 PM - 3:45 PM

[17p-B2-10] Highly Sensitive Detection of Ammonia Gas using Semiconducting Single-Walled Carbon Nanotubes Thin Film

^○Naoto Matsutake¹, Yuto Suzuki¹, Ryuichi Nomoto¹, Hiroshi Tabata¹, Oasmu Kubo¹, Mitsuhiro Katayama¹, Tsuyoshi Ueda², Ryotaro Shimazaki², Hiromasa Tanjou², Masashi Horiuchi² (Osaka Univ.¹, New Cosmos Electric Co., Ltd.²)